Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC ktx312t
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SEMICONDUCTOR KTX312T
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
E
B
FEATURES DIM MILLIMETERS
A _
2.9 + 0.2
1 5
Including two(TR, Diode) devices in TSV. B 1.6+0.2/-0.1
_
(Thin Super Mini type with 5 pin) C 0.70 + 0.05
G
2 _
D 0.4 + 0.1
Simplify circuit design.
F
A
E 2.8+0.2/-0.3
3 4 F _
1.9 + 0.2
Reduce a quantity of parts and manufacturing process.
G
G 0.95
D
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
K 0.60
C
L 0.55
L
EQUIVALENT CIRCUIT (TOP VIEW) I H
J J
5 4
Marking 5 4
1. D 1 ANODE
2. Q 1 BASE
Lot No. 3. Q 1 EMITTER
4. Q 1 COLLECTOR
D1 Q1 Type Name
CM 5. D 1 CATHODE
1 2 3
1 2 3 TSV
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
IC -1.5 A
Collector Current
ICP -3 A
Collector Power Dissipation PC * 0.9
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~125
* Package mounted on a ceramic board (600 0.8 )
DIODE D1
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage VRRM 25 V
Reverse Voltage VR 20 V
Average Forward Current IO 1.0 A
Non-Repetitive Peak Surge current IFSM 3
Junction Temperature Tj 125
Storage Temperature Tstg -55~125
2003. 3. 11 Revision No : 1 1/4
KTX312T
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-12V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -20 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=-750mA, IB=-15mA - -120 -180 mV
Base-Emitter Saturation Voltage VBE(sat) IC=-750mA, IB=-15mA - -0.85 -1.2 V
DC Current Gain hFE VCE=-2V, IC=-100mA 200 - 560
Transition Frequency fT VCE=-2V, IC=-300mA - 210 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz - 30 - pF
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