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SEMICONDUCTOR KTX403U
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE
SWITCHING APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
B
FEATURES B1
Including two(TR, Diode) devices in USV.
1 5 DIM MILLIMETERS
(Ultra Super Mini type with 5 leads) A _
2.00 + 0.20
C
A1
2 _
1.3 + 0.1
A
A1
Simplify circuit design.
C
B _
2.1 + 0.1
3 4 D _
Reduce a quantity of parts and manufacturing process. B1 1.25+ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H _
0.9 + 0.1
T 0.15+0.1/-0.05
H
T
EQUIVALENT CIRCUIT (TOP VIEW)
5 4 Marking G
5 4 1. D 1 ANODE
Lot No. 2. Q 1 BASE
3. Q 1 EMITTER
D1 Q1 4. Q 1 COLLECTOR
Type Name
CK 5. D 1 CATHODE
1 2 3
1 2 3 USV
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6
IC 500
Collector Current
ICP * 1 A
Collector Power Dissipation PC 100
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~125
DIODE (SBD) D1
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 30 V
Reverse Voltage VR 30 V
Maximum (Peak) Forward Current IFM 300
Average Forward Current IO 200
Surge Current (10mS) IFSM 1 A
Junction Temperature Tj 125
Storage Temperature Range Tstg -55 125
2008. 8. 29 Revision No : 3 1/4
KTX403U
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 100
Collector-Base Breakdown Voltage V(BR)CBO IE=10 15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1 12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 6 - - V
DC Current Gain hFE VCE=2V, IC=10 270 - 680 -
Collector-Emitter Saturation Voltage VCE(SAT) IC=200 , IB=10 - 90 250
Transition Frequency fT VCE=2V, IC=10 , f=100 - 320 -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 - 7.5 -
DIODE (SBD) D1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF(1) IF=1mA - 0.22 -
VF(2) IF=10mA - 0.29 -
Forward Voltage V
VF(3) IF=100mA - 0.38 -
VF(4) IF=200mA - 0.43 0.55
Reverse Current IR VR=30V - - 50
Total Capacitance CT VR=0, f=1 - 50 -
2008. 8. 29 Revision No : 3 2/4
KTX403U
Q 1 (NPN TRANSISTOR)
h FE - I C VCE(sat) - I C
1K
COLLECTOR-EMITTER SATURATION
1K
Ta=125 C I C /IB =20
500
500 Ta=25 C 300
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (mV)
300 Ta=-40 C
100
50
100 30 C
125
Ta= C C
50 25 0
10 Ta= Ta=-4
30 5
3
VCE =2V
10 1
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
1K
COLLECTOR-EMITTER SATURATION
10K
Ta=25 C I C /IB =20
500
BASE-EMITTER SATURATION
300 5K
VOLTAGE VBE(sat) (mV)
VOLTAGE VCE(sat) (mV)
3K
100
50
30 1K Ta=-40 C
I C /IB =50
10 I C /I B =20 500 Ta=25 C 5 C
I C/I B =
10 Ta=12
5 300
3
1 100
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
I C - VBE fT - IC
1K 1K
TRANSITION FREQUENCY f T (MHz)
VCE =2V VCE =2V
COLLECTOR CURRENT I C (mA)
500 Ta=25 C
300 500
300
100
50
25 C
5 C
40 C
30 100
Ta=2
Ta=1
Ta=-
10 50
5 30
3
1 10
0 0.5 1.0 1.5 1 3 10 30 100 300 1K
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA)
2008. 8. 29 Revision No : 3 3/4
KTX403U
C ob - VCB , C ib - VEB
COLLECTOR OUTPUT CAPACITANCE C ob (PF)
1K
COLLECTOR INPUT CAPACITANCE C ib (PF)
I E =0A
500 f=1MHz
Ta=25 C
300
100
50
30
C ib
10
C ob
5
3
1
0.1 0.3 1 3 10 30 100
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE VEB (V)
D 1 (SBD)
I F - VF IR - VR
10
2 Ta=25 C Ta=25 C
10
FORWARD CURRENT I F (mA)
REVERSE CURRENT I R (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo