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SEMICONDUCTOR KTX401E
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
B
B1
FEATURES
Including two(TR, Diode) devices in TESV.
(Thin Extreme Super mini type with 5pin.) 1 5 DIM MILLIMETERS
C
A _
1.6 + 0.05
Simplify circuit design.
A1
A
A1 _
1.0 + 0.05
2
C
Reduce a quantity of parts and manufacturing process. B _
1.6 + 0.05
B1 _
1.2+ 0.05
D
3 4 C 0.50
D _
0.2 + 0.05
EQUIVALENT CIRCUIT (TOP VIEW)
H _
0.5 + 0.05
5 4
Marking P P J _
0.12 + 0.05
P 5
5 4
H
Lot No.
J
Q1
C
D1
Type Name
1. D 1 ANODE
2. Q 1 EMITTER
3. Q 1 BASE
hFE Rank
4. Q 1 COLLECTOR
1 2 3 5. D 1 CATHODE
1 2 3
MARK SPEC TESV
KTX401E KTX401E
Type
Q1 hFE Rank : Y Q1 hFE Rank : GR
Mark CD CE
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150
Base Current IB 30
Collector Power Dissipation PC 100
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
DIODE D1
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300
Average Forward Current IO 100
Surge Current (10mS) IFSM 2 A
Power Dissipation PD -
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2008. 9. 23 Revision No : 2 1/2
KTX401E
TRANSISTOR Q1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1
DC Current Gain hFE (Note) VCE=6V, IC=2 120 - 400
Collector-Emitter Saturation Voltage VCE(SAT) IC=100 , IB=10 - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1 80 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 - 2.0 3.5
Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 - 1.0 10 dB
Note) hFE Classification Y(4):120~240, GR:200~400.
DIODE D1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF(1) IF=1mA - 0.60 -
Forward Voltage VF(2) IF=10mA - 0.72 - V
VF(3) IF=100mA - 0.90 1.20
Reverse Current IR VR=80V - - 0.5
Total Capacitance CT VR=0, f=1 - 0.9 3.0
Reverse Recovery Time trr IF=10 - 1.6 4.0
2008. 9. 23 Revision No : 2 2/2
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