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ktx412t


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                                  SEMICONDUCTOR                                                                KTX412T
                                                                                        EPITAXIAL PLANAR NPN TRANSISTOR
                                            TECHNICAL DATA                            SILICON EPITAXIAL PLANAR TYPE DIODE

  GENERAL PURPOSE APPLICATION.
  ULTRA HIGH SPEED SWITCHING APPLICATION.
                                                                                                                E

                                                                                                                B
  FEATURES                                                                                                                           DIM   MILLIMETERS
                                                                                                                                      A           _
                                                                                                                                              2.9 + 0.2
                                                                                                          1              5
    Including two(TR, Diode) devices in TSV.                                                                                          B     1.6+0.2/-0.1
                                                                                                                                                  _
    (Thin Super Mini type with 5 pin)                                                                                                 C      0.70 + 0.05




                                                                                              G
                                                                                                          2                                       _
                                                                                                                                     D        0.4 + 0.1
    Simplify circuit design.




                                                                                          F
                                                                                      A
                                                                                                                                     E         2.8+0.2/-0.3
                                                                                                          3              4           F               _
                                                                                                                                                 1.9 + 0.2
     Reduce a quantity of parts and manufacturing process.




                                                                                              G
                                                                                                                                     G             0.95




                                                                                                                                 D
                                                                                                                                     H               _
                                                                                                                                                0.16 + 0.05
                                                                                                                                     I        0.00-0.10
                                                                                                                                     J     0.25+0.25/-0.15
                                                                                                                                     K           0.60




                                                                                      C
                                                                                                                                     L           0.55




                                                                                          L
 EQUIVALENT CIRCUIT (TOP VIEW)                                                                        J
                                                                                                                    I
                                                                                                                             J
                                                                                                                                 H



              5             4
                                                                                              1. D 1      ANODE
                                             Marking         5         4                      2. Q 1      BASE
                                                                            Lot No.           3. Q 1      EMITTER
                                                                                              4. Q 1      COLLECTOR
                                                                                              5. D 1      CATHODE

                                                             CN
                  D1        Q1
                                            Type Name



              1        2    3                                1   2     3                                                TSV




 MAXIMUM RATINGS (Ta=25                 )
 TRANSISTOR Q1

                       CHARACTERISTIC                            SYMBOL                   RATING                                      UNIT
   Collector-Base Voltage                                            VCBO                     20                                           V
   Collector-Emitter Voltage                                         VCEO                     20                                           V
   Emitter-Base Voltage                                              VEBO                         5                                        V
                                                                      IC                      1.5                                          A
   Collector Current
                                                                     ICP                          3                                        A
   Collector Power Dissipation                                       PC *                     0.9
   Junction Temperature                                               Tj                      150
   Storage Temperature Range                                         Tstg                 -55~125
 * Package mounted on a ceramic board (600         0.8   )



 DIODE D1
                       CHARACTERISTIC                            SYMBOL                   RATING                                      UNIT
   Repetitive Peak Reverse Voltage                                   VRRM                     25                                           V
   Reverse Voltage                                                   VR                       20                                           V
   Average Forward Current                                            IO                      1.0                                          A
   Non-Repetitive Peak Surge current                                 IFSM                         3
   Junction Temperature                                               Tj                      125
   Storage Temperature                                               Tstg                 -55~125


2003. 3. 11                      Revision No : 1                                                                                                              1/4
                                                                  KTX412T


 ELECTRICAL CHARACTERISTICS (Ta=25 )
 TRANSISTOR Q1
              CHARACTERISTIC                SYMBOL                              TEST CONDITION                           MIN.       TYP.     MAX.   UNIT
   Collector Cut-off Current                   ICBO           VCB=12V, IE=0                                                   -         -     0.1     A
   Emitter Cut-off Current                     IEBO           VEB=4V, IC=0                                                    -         -     0.1     A
   Collector-Base Breakdown Voltage          V(BR)CBO         IC=10 A, IE=0                                                  20         -      -      V
   Collector-Emitter Breakdown Voltage       V(BR)CEO         IC=1mA, IB=0                                                   20         -      -      V
   Emitter-Base Breakdown Voltage            V(BR)EBO         IE=10 A, IC=0                                                   5         -      -      V
   Collector-Emitter Saturation Voltage       VCE(sat)        IC=750mA, IB=15mA                                               -      130      200    mV
   Base-Emitter Saturation Voltage            VBE(sat)        IC=750mA, IB=15mA                                               -     0.85      1.2     V
   DC Current Gain                              hFE           VCE=2V, IC=100mA                                               200        -     560
   Transition Frequency                         fT            VCE=2V, IC=300mA                                                -      210       -    MHz
   Collector Output Capacitance                 Cob           VCB=10V, f=1MHz                                                 -         20     -     pF

                                                                      PW=20



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