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SEMICONDUCTOR KTX421U
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR
POWER MANAGEMENT.
FEATURES
B
Including two devices in US6. B1
(Ultra Super mini type with 6 leads)
1 6 DIM MILLIMETERS
Simplify circuit design. A _
2.00 + 0.20
C
_
A1
2 5 A1 1.3 + 0.1
A
Reduce a quantity of parts and manufacturing process. B _
2.1 + 0.1
C
3 4 D B1 _
1.25 + 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
EQUIVALENT CIRCUIT (TOP VIEW) _
H 0.9 + 0.1
H
T T 0.15+0.1/-0.05
6 5 4 MARKING
6 5 4
G
Lot No.
Q2
BS
1. Q1 EMITTER
Type Name 2. Q1 BASE
Q1 3. Q2 DRAIN
4. Q2 SOURCE
5. Q2 GATE
6. Q1 COLLECTOR
1 2 3 1 2 3
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
US6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
IC 500 mA
Collector Current
ICP * 1 A
Collector Power Dissipation PC * 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGSS 20 V
DC Drain Current ID 100 mA
Drain Power Dissipation PC ** 150 mW
Channel Temperature Tch 150
Storage Temperature Range Tstg -55 150
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
2008. 9. 23 Revision No : 1 1/6
KTX421U
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A 15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA 12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A 6 - - V
DC Current Gain hFE VCE=2V, IC=10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA - 90 250 mV
Transition Frequency fT VCE=2V, IC=10mA, fT=100MHz - 320 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 7.5 - pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 1 A
Drain-Source Breakdown Voltage V(BR)DSS ID=100 A, VGS=0V 30 - - V
Drain Cut-off Current IDSS VDS=30V, VGS=0V - - 1 A
Gate Threshold Voltage Vth VDS=3V, ID=0.1mA 0.5 - 1.5 V
Forward Transfer Admittance |Yfs| VDS=3V, ID=10mA 25 - - mS
Drain-Source ON Resistance RDS(ON) ID=10mA, VGS=2.5V - 4 7
Input Capacitance Ciss VDS=3V, VGS=0V, f=1MHz - 8.5 - pF
Reverse Transfer Capacitance Crss VDS=3V, VGS=0V, f=1MHz - 3.3 - pF
Output Capacitance Coss VDS=3V, VGS=0V, f=1MHz - 9.3 - pF
Turn-on Time ton - 50 - nS
Switching Time VDD=5V, ID=10mA, VGS=0 5V
Turn-off Time toff - 160 - nS
2008. 9. 23 Revision No : 1 2/6
KTX421U
Q 1 (NPN TRANSISTOR)
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
1K 1K
Ta=125 C I C /IB =20
500
500 Ta=25 C
DC CURRENT GAIN h FE
300
VOLTAGE VCE(sat) (mV)
300 Ta=-40 C
100
50
100 30 C
125
Ta= C C
50 25 0
10 Ta= Ta=-4
30 5
3
VCE =2V
10 1
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
1K 10K
COLLECTOR-EMITTER SATURATION
Ta=25 C I C /IB =20
500
BASE-EMITTER SATURATION
300 5K
VOLTAGE VBE(sat) (mV)
VOLTAGE VCE(sat) (mV)
3K
100
50
30 1K Ta=-40 C
I C /IB =50
10 I C /I B =20 500 Ta=25 C 5 C
I C/I B =
10 Ta=12
5 300
3
1 100
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
I C - VBE f T - IC
1K 1K
TRANSITION FREQUENCY f T (MHz)
VCE =2V VCE =2V
COLLECTOR CURRENT I C (mA)
500
500 Ta=25 C
300
300
100
50
25 C
5 C
40 C
30 100
Ta=2
Ta=1
Ta=-
10 50
5 30
3
1 10
0 0.5 1.0 1.5 1 3 10 30 100 300 1K
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA)
2008. 9. 23 Revision No : 1 3/6
KTX421U
C ob - VCB , C ib - VEB
Pc - Ta
COLLECTOR OUTPUT CAPACITANCE C ob (PF)
1K
COLLECTOR INPUT CAPACITANCE C ib (PF)
COLLECTOR POWER DISSIPATION PC (mW)
I E =0A
500 f=1MHz 200
Ta=25 C
300
150
100
50
30 100
C ib
10
C ob 50
5
3
0
0 25 50 75 100 125 150
1
0.1 0.3 1 3 10 30 100
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE VEB (V)
2008. 9. 23 Revision No : 1 4/6
KTX421U
Q 2 (N CHANNEL MOS FIELD EFFECT TRANSISTOR)
I D - V DS
I D - V DS (LOW VOLTAGE REGION)
100 1.0
2.5V COMMON SOURCE 2.5V 1.2V COMMON
Ta=25 C SOURCE
DRAIN CURRENT I D (mA)
1.15V
DRAIN CURRENT ID (mA)
2.2V Ta=25 C
80 0.8
60 2.0V 0.6
1.1V
40 1.8V 0.4
1.05V
1.6V
20 0.2 1.0V
1.4V
VGS =1.2V VGS =0.9V
0 0
0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 0.6
DRAIN-SOURCE VOLTAGE V DS (V) DRAIN-SOURCE VOLTAGE V DS (V)
I DR - V DS I D - VGS
100 100
DRAIN REVERSE CURRENT I DR (mA)
COMMON SOURCE
30 COMMON SOURCE 30 V DS =3V
DRAIN CURRENT ID (mA)
VGS =0 10
10
Ta=25 C
3 3
C
100
1 D 1
Ta=
Ta=25 C
0.3 G I DR 0.3
Ta=-25 C
0.1 S 0.1
0.03 0.03
0.01 0.01
0 -0.4 -0.8 -1.2 -1.6 0 1 2 3 4 5
DRAIN-SOURCE VOTAGE V DS (V) GATE-SOURCE VOTAGE VGS (V)
Y fs - ID C - VDS
300 100
FORWARD TRANSFER ADMITTANCE
COMMON SOURCE COMMON SOURCE
V DS =3V 50 VGS =0
Ta=25 C f=1MHz
CAPACITANCE C (pF)
30
100 Ta=25 C
C oss
Y (mS)
50 C iss
10
30
fs
5
3
C rss
10
5 1
1 3 5 10 30 50 100 0.1 0.3 0.5 1 3 5 10 20
DRAIN CURRENT I D (mA) DRAIN-SOURCE VOLTAGE V DS (V)
2008. 9. 23 Revision No : 1 5/6
KTX421U
VDS(ON) - I D t - ID
2 1K
COMMON SOURCE
DRAIN-SOURCE ON VOLTAGE
1 VGS =2.5V 500
SWITCHING TIME t (ns)
0.5 Ta=25 C
300
0.3 t on
VDS(ON) (V)
tr
0.1 100 t off
tf
0.05 50 VDD =5V
ID VOUT
0.03 5V D.U. < 1%
=
30 V IN
VIN :t r , t f < 5ns
0
RL
(Z OUT =50)
50
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