Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC ktx811t
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SEMICONDUCTOR KTX811T
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
TV Control board Application
E
K B K
FEATURES
DIM MILLIMETERS
One NPN Transistor (Q1) 1 6 A _
2.9 + 0.2
B 1.6+0.2/-0.1
Two Switching Diode (D1, D2) C _
0.70 + 0.05
G
2 5 _
Low Saturation Voltage D 0.4 + 0.1
F
A
E 2.8+0.2/-0.3
: VCE(sat) = 0.25V(Max)@ IC = 100mA, IB = 10mA _
G
3 4 F 1.9 + 0.2
G 0.95
D
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
K 0.60
C
L
EQUIVALENT CIRCUIT (TOP VIEW) L 0.55
I H
J J
6 5 4 Marking
1. Q1 Emitter
6 5 4 2. Q1 Base
Lot No. 3. D1 Cathode / D2 Anode
4. D1 Anode
D2 D1
5. D2 Cathode
Q1
Type Name
T8 6. Q1 Collector
TS6
1 2 3
1 2 3
MAXIMUM RATING (Ta=25 )
TRANSISTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 500 mA
Base Current IB 100 mA
DIODE
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 80 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300 mA
Average Forward Current IO 200 mA
Surge Current (100 ) IFSM 4 A
COMMON
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation *PD 900 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
* : Package mounted on a ceramic board (600mm2 0.8mm)
2011. 5. 23 Revision No : 2 1/4
KTX811T
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 80 - - V
hFE(1) VCE=1V, IC=10mA 100 - -
DC Current Gain
hFE(2) VCE=1V, IC=100mA 100 - 250
Collector-Emiotter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - - 0.25 V
Base-Emitter Voltage VBE VCE=1V, IC=100mA - - 1.2 V
Transition Frequency fT VCE=2V, IC=10mA 100 - - MHZ
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF(1) IF=1mA - 0.60 -
Forward Voltage VF(2) IF=10mA - 0.72 - V
VF(3) IF=100mA - 0.90 1.20
Reverse Current IR VR=80V - - 0.1 A
Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF
Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS
2011. 5. 23 Revision No : 2 2/4
KTX811T
Q1 (NPN TRANSISTOR)
I C - VCE h FE - I C
400 1k
COLLECTOR CURRENT I C (mA)
5 COMMON COMMON EMITTER
3
EMITTER 500 VCE =1V
DC CURRENT GAIN h FE
Ta=25 C
300 2 300
Ta=100 C
Ta=25 C
200 100
1 Ta=-25 C
50
100 I B =0.5mA 30
0
0 10
0 2 4 6 8 10 1 3 10 30 100 500
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
V CE(sat) - I C I C - VBE
COLLECTOR-EMITTER SATURATION
1 400
COLLECTOR CURRENT I C (mA)
COMMON EMITTER COMMON EMITTER
I C /I B =10 V CE =1V
0.5
VOLTAGE VCE(sat) (V)
300
0.3
C
5 C
200
C
100
Ta=-25
Ta=2
0.1
Ta=
Ta=100 C
0.05 Ta=25 C 100
Ta=-25 C
0.02 0
1 3 10 30 100 300 500 0 0.2 0.4 0.6 0.8 1.0 1.2
COLLECTOR-CURRENT I C (mA) BASE EMITTER VOLTAGE V BE (V)
D1, D2 (SWITCHING DIODE)
I F - VF I R - VR
3
10 10
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