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KTX955T
SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR
N CHANNEL JUNCTION FIELD
TECHNICAL DATA EFFECT TRANSISTOR
AM BAND AMPLIFLER APPLICATION
E
FEATURES
B
Composite type with J-FET and NPN transistors contained in a package. DIM MILLIMETERS
A _
2.9 + 0.2
1 5
improving the mounting effciency B 1.6+0.2/-0.1
C _
0.70 + 0.05
Drain and emitter are shared.
G
2 _
D 0.4 + 0.1
F
A
E 2.8+0.2/-0.3
F _
1.9 + 0.2
G
3 4
G 0.95
D
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
K 0.60
EQUIVALENT CIRCUIT (TOP VIEW)
C
L
L 0.55
5 4 Marking J
I
J
H
IDSS Rank
5 4 1. SOURCE
Lot No. 2. EMITTER/DRAIN
Q1 Q2 3. BASE
4. COLLECTOR
Type Name
BJ 5. GATE
1 2 3
1 2 3
TSV
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSX 15 V
Gate-Drain Voltage VGDS -15 V
Gate Current IG 10 mA
Drain Current ID 50 mA
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
Base Current IB 30 mA
Q1,Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC* 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
* Package mounted on a ceramic board (600 0.8 )
2007. 5. 29 Revision No : 0 1/6
KTX955T
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate-Drain Breakdown Voltage V(BR)GDS VDS=0V, IG=-10 A -15 - - V
Gate-Source Cut-off Voltage VGS(OFF) VDS=5V, ID=100 A -0.4 -0.7 -1.5 V
Gate Leakage Current IGSS VDS=0V, VGS=-10V - - -1.0 A
Drain Current IDSS(Note) VDS=5V, VGS=0V 10.0 - 32.0 mA
Forward Transfer Admittance yfs VDS=5V, VGS=0V, f=1kHz 24 35 - mS
Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz - 10.0 - pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz - 2.9 - pF
Noise Figure NF VDS=5V, Rg=1k , ID=1mA, f=1kHz, - 1.0 - dB
Note : IDSS Classification G : 10.0~20.0 , H : 16.0~32.0
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A
Emitter Cur-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE VCE=6V, IC=2mA 135 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - 0.86 1.0 V
Transition Frequency fr VCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
VCE=6V, IC=0.1mA,
Noise Figure NF - 1.0 10 dB
f=1kHz, Rg=10k
2007. 5. 29 Revision No : 0 2/6
KTX955T
Q 1 (JFET)
ID - VDS ID - VDS
20 20
DRAIN CURRENT ID (mA)
VGS=0V
DRAIN CURRENT ID (mA)
16 VGS=0V 16
-0.1V
12 -0.1V
12 -0.2V
-0.2V
8 -0.3V
8
-0.3V
-0.4V
-0.4V
4 4 -0.5V
-0.7V -0.6V -0.5V
-0.7V -0.6V
0 0
0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 12
DRAIN - SOURCE VOLTAGE VDS (V) DRAIN - SOURCE VOLTAGE VDS (V)
ID - VGS ID - VGS
22 16 VDS=5V
VDS=5V
20 IDSS=15mA
DRAIN CURRENT ID (mA)
DRAIN CURRENT ID (mA)
14
18
16 12
14 10
A
m
30
12
C
SS =
8
25
10
mA
=-
ID
C
Ta
A
75
20
6
m
8
15
mA
6 4
10
25 C
4
2
2
0 0
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0
GATE - SOURCE VOLTAGE VGS (V) GATE - SOURCE VOLTAGE VGS (V)
FORWARD TRANSFER ADMITTANCE yfs (mS)
FORWARD TRANSFER ADMITTANCE yfs (mS)
yfs - ID yfs - IDSS
70 100
VDS=5V VDS=5V
50 f=1kHz A VGS=0V
30m 70 f=1kHz
30 mA
=15 50
I DSS
20
30
10
7
5 20
3
2 10
0.3 1 2 3 5 7 10 20 30 50 10 20 30 50
DRAIN CURRENT ID (mA) DRAIN CURRENT IDSS (mA)
2007. 5. 29 Revision No : 0 3/6
KTX955T
Q 1 (JFET)
VGS(off) - IDSS Ciss - VDS
3 3
INPUT CAPACITANCE Ciss (pF)
CUTOFF VOLTAGE VGS(off) (V)
VDS=5V VGS=0V
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