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SEMICONDUCTOR KU035N06P
TECHNICAL DATA N-ch Trench MOS FET
General Description
This Trench MOSFET has better characteristics, such as fast A
O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for DC/DC Converter,
E G DIM MILLIMETERS
Synchronous Rectification and a load switch in battery powered A _
9.9 + 0.2
B
B 15.95 MAX
applications Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
FEATURES K _
P F 2.8 + 0.1
VDSS= 60V, ID= 160A M G 3.7
L
H 0.5+0.1/-0.05
Drain-Source ON Resistance : J I 1.5
RDS(ON)=3.5m (Max.) @VGS = 10V D J _
13.08 + 0.3
N N H K 1.46
L _
1.4 + 0.1
MAXIMUM RATING (Tc=25 ) M _
1.27 + 0.1
N _
2.54 + 0.2
O _
4.5 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT 1 2 3 P _
2.4 + 0.2
1. GATE
2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
TO-220AB
@TC=25 160*
ID
Drain Current @TC=100 101 A
Pulsed (Note1) IDP 480*
Single Pulsed Avalanche Energy EAS 960 mJ
(Note 2)
Repetitive Avalanche Energy EAR 12 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 167 W
PD
Dissipation Derate above 25 1.33 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.75 /W
Thermal Resistance,
RthJA 62.5 /W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.
Calculated continuous Current based on maximum allowable junction temperature
PIN CONNECTION
D
G
S
2011. 1. 12 Revision No : 0 1/7
KU035N06P
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 60 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=5mA, Referenced to 25 - 0.06 - V/
Drain Cut-off Current IDSS VDS=60V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=80A - 2.9 3.5 m
Dynamic
Total Gate Charge Qg - 200 -
VDS=48V, ID=80A
Gate-Source Charge Qgs - 35 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 70 -
Turn-on Delay time td(on) - 110 -
VDD=30V
Turn-on Rise time tr - 150 -
ID=80A ns
Turn-off Delay time td(off) - 460 -
RG=25 (Note4,5)
Turn-off Fall time tf - 280 -
Input Capacitance Ciss - 8400 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 960 - pF
Reverse Transfer Capacitance Crss - 520 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 150
VGS
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