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SEMICONDUCTOR KU063N03Q
TECHNICAL DATA N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
H
suitable for DC/DC Converter and Battery pack..
T
D P G L
U
FEATURES
A
VDSS=30V, ID=16A.
DIM MILLIMETERS
Drain to Source On Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=6.3m (Max.) @ VGS=10V 8 5
B2 _
6.02 + 0.3
RDS(ON)=10.7m (Max.) @ VGS=4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
1 H _
1.63 + 0.2
4
L _
0.65 + 0.2
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) P 1.27
T 0.20+0.1/-0.05
CHARACTERISTIC SYMBOL RATING UNIT U 0.1 MAX
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS 20 V
DC@Ta=25 (Note 1) ID 16 A FLP-8
Drain Current
Pulsed IDP 64 A
Drain Power Dissipation @Ta=25 (Note 1) PD 2.5 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
Thermal Resistance, Junction to Ambient (Note 1) RthJA 50 /W
Note1) Surface Mounted on 1 1 FR4 Board, t 10sec. KU063N
03Q
PIN CONNECTION (TOP VIEW)
S 1 8 D 1 8
2 7
S 2 7 D
3 6
S 3 6 D
4 5
G 4 5 D
2010. 6. 17 Revision No : 0 1/4
KU063N03Q
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=250 A 30 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=30V - - 1 A
Gate to Source Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 V
VGS=10V, ID=16A (Note2) - 5.3 6.3
Drain to Source On Resistance RDS(ON) m
VGS=4.5V, ID=13A (Note2) - 8.9 10.7
Forward Transconductance gfs VDS=5V, ID=16A (Note2) - 52 - S
Dynamic
Input Capaclitance Ciss - 1751 -
Ouput Capacitance Coss VDS=15V, VGS=0V, f=1MHz (Note2) - 350 - pF
Reverse Transfer Capacitance Crss - 253 -
Gate Resistance Rg f=1MHz - 2.8 -
VGS=10V - 39.7 -
Total Gate Charge Qg
VGS=4.5V - 20.1 -
VDS=15V, VGS=10V, ID=16A (Note2) nC
Gate to Source Charge Qgs - 6.8 -
Gate to Drain Charge Qgd - 8.2 -
Turn-On Delay Time td(on) - 10.1 -
Turn-On Rise Time tr VDS=15V, VGS=10V - 10.5 -
ns
Turn-Off Delay Time td(off) ID=16A, RG=1.6 (Note2) - 31.2 -
Turn-Off Fall Time tf - 11.0 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage VSD VGS=0V, IS=16A (Note2) - 0.8 1.2 V
Reverse Recovery Time trr IS=16A, dI/dt=100A/ s - 22.5 - ns
Reverse Recovered Charge Qrr IS=16A, dI/dt=100A/ s - 9.5 - nC
Note2) Pulse Test : Pulse Width 300 , Duty Cycle 2%
2010. 6. 17 Revision No : 0 2/4
KU063N03Q
2010. 6. 17 Revision No : 0 3/4
KU063N03Q
2010. 6. 17 Revision No : 0 4/4
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