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SEMICONDUCTOR KU086N10P/F
TECHNICAL DATA N-ch Trench MOS FET
General Description
KU086N10P
This Trench MOSFET has better characteristics, such as fast A
O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for DC/DC Converter,
E G DIM MILLIMETERS
Synchronous Rectification and a load switch in battery powered A _
9.9 + 0.2
B
B 15.95 MAX
applications Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
FEATURES K _
P F 2.8 + 0.1
VDSS= 100V, ID= 95A M G 3.7
L
H 0.5+0.1/-0.05
Drain-Source ON Resistance : J I 1.5
RDS(ON)=8.6m (Max.) @VGS = 10V D J _
13.08 + 0.3
N N H K 1.46
L _
1.4 + 0.1
MAXIMUM RATING (Tc=25 ) M _
1.27 + 0.1
N _
2.54 + 0.2
RATING O _
4.5 + 0.2
CHARACTERISTIC SYMBOL UNIT 1 2 3 P _
2.4 + 0.2
1. GATE
KU086N10P KU086N10F 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS 20 V
TO-220AB
@TC=25 95 50
ID
Drain Current @TC=100 60 32.5 A
Pulsed (Note1) IDP 400* KU086N10F
Single Pulsed Avalanche Energy EAS
A C
570 mJ
(Note 2) F
Repetitive Avalanche Energy
O
EAR 7.1 mJ
(Note 1) E DIM MILLIMETERS
B
Peak Diode Recovery dv/dt A _
10.16 + 0.2
dv/dt 4.5 V/ns
G
(Note 3) B _
15.87 + 0.2
C _
2.54 + 0.2
Drain Power Tc=25 167 50 W D _
0.8 + 0.1
PD _
Dissipation Derate above 25 1.33 0.4 W/ E 3.18 + 0.1
K
F _
3.3 + 0.1
Maximum Junction Temperature Tj 150 G _
12.57 + 0.2
L M
R H _
0.5 + 0.1
J
Storage Temperature Range Tstg -55 ~ 150 J _
13.0 + 0.5
K _
3.23 + 0.1
D
Thermal Characteristics L 1.47 MAX
M 1.47 MAX
RthJC N N
Thermal Resistance, Junction-to-Case 0.75 2.5 /W H
N _
2.54 + 0.2
O _
6.68 + 0.2
Thermal Resistance,
RthJA 62.5 /W Q _
4.7 + 0.2
Junction-to-Ambient R _
2.76 + 0.2
1 2 3
Q
* : Drain current limited by maximum junction temperature. 1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
TO-220IS (1)
D
G
S
2011. 1. 20 Revision No : 0 1/7
KU086N10P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 100 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=5mA, Referenced to 25 - 0.09 - V/
Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=47.5A - 7.3 8.6 m
Dynamic
Total Gate Charge Qg - 200 -
VDS=80V, ID=80A
Gate-Source Charge Qgs - 35 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 60 -
Turn-on Delay time td(on) - 120 -
VDD=50V
Turn-on Rise time tr - 230 -
ID=80A ns
Turn-off Delay time td(off) - 520 -
RG=25 (Note4,5)
Turn-off Fall time tf - 200 -
Input Capacitance Ciss - 8800 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 630 - pF
Reverse Transfer Capacitance Crss - 340 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 95
VGS
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