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ku2751k


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                                SEMICONDUCTOR                                                    KU2751K
                                          TECHNICAL DATA                                       N-Ch Trench MOSFET


  General Description

  This Trench MOSFET has better characteristics, such as fast switching
  time, low on resistance, low gate charge and excellent avalanche
  characteristics. It is mainly suitable for DC/DC Converter.



  FEATURES
    VDSS=30V, ID=52A.
    Low Drain to Source On-state Resistance.
     : RDS(ON)=11m (Max.) @ VGS=10V
     : RDS(ON)=15m (Max.) @ VGS=4.5V




  MAXIMUM RATING (Ta=25                   Unless otherwise Noted)
                   CHARACTERISTIC                        SYMBOL RATING        UNIT
   Drain to Source Voltage                                VDSS        30       V
   Gate to Source Voltage                                 VGSS         20      V     MARKING
                             DC@TC=25          (Note1)     ID         52
   Drain Current                                                               A
                             Pulsed            (Note2)     IDP        208
   Single Pulsed Avalanche Energy              (Note3)    EAS         170      mJ
                             @TC=25            (Note1)                54
   Drain Power Dissipation                                 PD                  W
                             @Ta=25            (Note2)                2.5
   Maximum Junction Temperature                            Tj         150
   Storage Temperature Range                              Tstg      -55 150
   Thermal Resistance, Junction to Case        (Note1)    RthJC       2.3      /W
   Thermal Resistance, Junction to Ambient     (Note2)    RthJA       50       /W
  Note 1) RthJC means that the infinite heat sink is mounted.
  Note 2) Surface Mounted on 1       1 Pad of 2 oz copper.
  Note 3) L=78.5 H, IAS=52A, VDD=15V, VGS=10V, Starting Tj=25


  PIN CONNECTION (TOP VIEW)




2010. 1. 18                    Revision No : 0                                                                      1/4
                                                                KU2751K

 ELECTRICAL CHARACTERISTICS (Ta=25 )
              CHARACTERISTIC                         SYMBOL              TEST CONDITION                MIN.   TYP.   MAX.   UNIT
    Static
   Drain to Source Breakdown Voltage                  BVDSS     VGS=0V, ID=250 A                        30     -       -     V
   Drain Cut-off Current                              IDSS      VGS=0V, VDS=30V                         -      -      1      A
   Gate to Source Leakage Current                     IGSS      VGS=   20V, VDS=0V                      -      -      100   nA
   Gate to Source Threshold Voltage                    Vth      VDS=VGS, ID=250 A                      1.0     -      3.0    V
                                                                VGS=10V, ID=20A              (Note4)    -     9.2    11.0
   Drain to Source On Resistance                     RDS(ON)                                                                m
                                                                VGS=4.5V, ID=20A             (Note4)    -     12.5   15.0
   Forward Transconductance                            gfs      VDS=5V, ID=20A               (Note4)    -      43      -     S
   Dynamic
   Input Capacitance                                   Ciss                                             -     777      -
   Ouput Capacitance                                   Coss     VDS=15V, f=1MHz, VGS=0V                 -     271      -     pF
   Reverse Transfer Capacitance                        Crss                                             -      74      -
   Gate Resistance                                     Rg       f=1MHz                                  -     1.0      -
                                   VGS=10V             Qg                                               -     12.5     -
   Total Gate Charge
                                   VGS=4.5V            Qg                                               -     6.8      -
                                                                VDS=15V, VGS=10V, ID=20A     (Note4)                         nC
   Gate to Source Charge                               Qgs                                              -     2.4      -
   Gate to Drain Charge                                Qgd                                              -     2.2      -
   Turn-On Delay Time                                 td(on)                                            -     7.0      -
   Turn-On Rise Time                                    tr      VDD=15V, VGS=10V                        -     2.9      -
                                                                                                                             ns
   Turn-Off Delay Time                                td(off)   ID=20A, RG=1.6             (Note4)      -     21.0     -
   Turn-Off Fall Time                                   tf                                              -     2.6      -
   Source to Drain Diode Ratings
   Source to Drain Forward Voltage                    VSD       VGS=0V, IS=20A               (Note4)    -     0.8     1.2    V
   Reverse Recovery Time                                trr     IS=20A, dI/dt=100A/ s       (Note4)     -     18.0     -     ns
   Reverse Recovered Charge                            Qrr      IS=20A, dI/dt=100A/ s       (Note4)     -     7.5      -     nC
   Note 4) Pulse Test : Pulse width <300   , Duty cycle < 2%




2010. 1. 18                        Revision No : 0                                                                                 2/4
                                KU2751K




2010. 1. 18   Revision No : 0             3/4
                                KU2751K




2010. 1. 18   Revision No : 0             4/4



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