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SEMICONDUCTOR KF3N40D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF3N40D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
L
avalanche characteristics. It is mainly suitable for LED Lighting and C D A _
6.60 + 0.20
B _
6.10 + 0.20
switching mode power supplies. C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
_
FEATURES F
G
2.30 + 0.10
0.96 MAX
VDSS(Min.)= 400V, ID= 2.2A H
J
H 0.90 MAX
J _
1.80 + 0.20
E
Drain-Source ON Resistance : RDS(ON)=3.4 (max) @VGS =10V G N K _
2.30 + 0.10
L _
0.50 + 0.10
Qg(typ.) =4.4nC F F M M _
0.50 + 0.10
N 0.70 MIN
O 0.1 MAX
MAXIMUM RATING (Tc=25 )
1 2 3
1. GATE
2. DRAIN
3. SOURCE
CHARACTERISTIC SYMBOL RATING UNIT O
Drain-Source Voltage VDSS 400 V
Gate-Source Voltage VGSS 30 V
@TC=25 2.2 DPAK (1)
ID
Drain Current @TC=100 1.4 A
Pulsed (Note1) IDP 6*
Single Pulsed Avalanche Energy
EAS 52 mJ KF3N40I
(Note 2)
Repetitive Avalanche Energy A H
EAR 3 mJ C J
(Note 1)
Peak Diode Recovery dv/dt D
dv/dt 4.5 V/ns
(Note 3)
B
DIM MILLIMETERS
Drain Power TC=25 40 W A _
6.6 + 0.2
PD M B _
6.1 + 0.2
Dissipation
K
Derate above25 0.32 W/ P
C _
5.34 + 0.3
N D _
0.7 + 0.2
Maximum Junction Temperature Tj 150 E _
9.3 +0.3
E
F _
2.3 + 0.2
Storage Temperature Range Tstg -55 150 G _
0.76 + 0.1
G H _
2.3 + 0.1
Thermal Characteristics F F L J _
0.5 + 0.1
K _
1.8 + 0.2
Thermal Resistance, Junction-to-Case RthJC 3.1 /W L _
0.5 + 0.1
M _
1.0 + 0.1
Thermal Resistance, Junction-to- 0.96 MAX
RthJA 110 /W 1 2 3 N
Ambient 1. GATE P _
1.02 + 0.3
2. DRAIN
* : Drain current limited by maximum junction temperature. 3. SOURCE
PIN CONNECTION IPAK(1)
D
G
S
2010. 8. 23 Revision No : 0 1/6
KF3N40D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 400 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.4 - V/
Drain Cut-off Current IDSS VDS=400V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.1A - 2.8 3.4
Dynamic
Total Gate Charge Qg - 4.4 5.8
VDS=320V, ID=2.2A
Gate-Source Charge Qgs - 1.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2.0 -
Turn-on Delay time td(on) - 10 -
VDD=200V, ID=2.2A
Turn-on Rise time tr - 11 -
RG=25 (Note4,5) ns
Turn-off Delay time td(off) - 20 -
VGS=10V
Turn-off Fall time tf - 17 -
Input Capacitance Ciss - 163 211
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 26 - pF
Reverse Transfer Capacitance Crss - 2.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 2
VGS
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