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SEMICONDUCTOR KF3N50DZ/DS
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
A K
charge and excellent avalanche characteristics. It is mainly suitable for C D L
DIM MILLIMETERS
A _
6.60 + 0.20
electronic ballast and switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
_
FEATURES B E 2.70 + 0.15
_
2.30 + 0.10
F
VDSS= 500V, ID= 2.5A G 0.96 MAX
H 0.90 MAX
H
Drain-Source ON Resistance : RDS(ON)=2.5 (Max) @VGS = 10V J
E J _
1.80 + 0.20
G N K _
2.30 + 0.10
Qg(typ) = 7.50nC L _
0.50 + 0.10
trr(typ) = 120ns (KF3N50DS) F F M M _
0.50 + 0.10
N 0.70 MIN
trr(typ) = 300ns (KF3N50DZ) O 0.1 MAX
1 2 3
1. GATE
2. DRAIN
MAXIMUM RATING (Tc=25 ) 3. SOURCE
O
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
DPAK (1)
@TC=25 2.5
ID
Drain Current @TC=100 1.5 A
Pulsed (Note1) IDP 7
Single Pulsed Avalanche Energy EAS 110 mJ
(Note 2)
Repetitive Avalanche Energy EAR 4 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 10 V/ns
(Note 3)
Drain Power Tc=25 40 W
PD
Dissipation Derate above 25 0.32 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 3.1 /W
Thermal Resistance, Junction-to-
RthJA 110 /W
Ambient
PIN CONNECTION
(KF3N50DZ/DS)
D
G
S
2010. 11. 29 Revision No : 0 1/6
KF3N50DZ/DS
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.25A - 2.0 2.5
Dynamic
Total Gate Charge Qg - 8.0 -
VDS=400V, ID=3A
Gate-Source Charge Qgs - 2.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 3.5 -
Turn-on Delay time td(on) - 15 -
VDD=250V
Turn-on Rise time tr - 20 -
ID=3A ns
Turn-off Delay time td(off) - 25 -
RG=25 (Note4,5)
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 350 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 45 - pF
Reverse Transfer Capacitance Crss - 4.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 3
VGS
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