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SEMICONDUCTOR KF3N50DZ/IZ
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF3N50DZ
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
A K
charge and excellent avalanche characteristics. It is mainly suitable for C D L
DIM MILLIMETERS
A _
6.60 + 0.20
electronic ballast and switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
E _
2.70 + 0.15
FEATURES B
_
2.30 + 0.10
F
VDSS= 500V, ID= 2.5A G 0.96 MAX
H 0.90 MAX
H
Drain-Source ON Resistance : RDS(ON)=2.5 (Max) @VGS = 10V J
E J _
1.80 + 0.20
G N K _
2.30 + 0.10
Qg(typ) = 7.50nC L _
0.50 + 0.10
F F M M _
0.50 + 0.10
N 0.70 MIN
1 2 3 1. GATE
2. DRAIN
MAXIMUM RATING (Tc=25 ) 3. SOURCE
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
DPAK (1)
@TC=25 2.5
ID
Drain Current @TC=100 1.5 A
Pulsed (Note1) IDP 7 KF3N50IZ
Single Pulsed Avalanche Energy EAS
A H
110 mJ
(Note 2) C J
D
Repetitive Avalanche Energy EAR 4 mJ
(Note 1)
B
Peak Diode Recovery dv/dt DIM MILLIMETERS
dv/dt 10 V/ns _
(Note 3) A 6.6 + 0.2
B _
6.1 + 0.2
M
Tc=25 40 W
K
Drain Power C _
5.34 + 0.3
PD P
D _
0.7 + 0.2
Dissipation Derate above 25 0.32 W/ N
E _
9.3 +0.3
E
F _
2.3 + 0.2
Maximum Junction Temperature Tj 150
G _
0.76 + 0.1
G _
Storage Temperature Range Tstg -55 150 H 2.3 + 0.1
L J _
0.5+ 0.1
F F
Thermal Characteristics K _
1.8 + 0.2
L _
0.5 + 0.1
Thermal Resistance, Junction-to-Case RthJC 3.1 /W M _
1.0 + 0.1
1 2 3 N 0.96 MAX
Thermal Resistance, Junction-to-
RthJA 110 /W P _
1.02 + 0.3
Ambient 1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
(KF3N50DZ/IZ)
IPAK(1)
D
G
S
2010. 11. 29 Revision No : 0 1/6
KF3N50DZ/IZ
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.25A - 2.0 2.5
Dynamic
Total Gate Charge Qg - 8.0 -
VDS=400V, ID=3A
Gate-Source Charge Qgs - 2.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 3.5 -
Turn-on Delay time td(on) - 15 -
VDD=250V
Turn-on Rise time tr - 20 -
ID=3A ns
Turn-off Delay time td(off) - 25 -
RG=25 (Note4,5)
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 350 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 45 - pF
Reverse Transfer Capacitance Crss - 4.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 3
VGS
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