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SEMICONDUCTOR KF3N60D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF3N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K
avalanche characteristics. It is mainly suitable for electronic ballast and L
DIM MILLIMETERS
C D A _
6.60 + 0.20
switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
FEATURES B E _
2.70 + 0.15
F _
2.30 + 0.10
VDSS= 600V, ID= 2.3A G 0.96 MAX
H 0.90 MAX
Drain-Source ON Resistance : RDS(ON)=3.3 @VGS = 10V H
J J _
1.80 + 0.20
E
K _
2.30 + 0.10
Qg(typ) = 8.5nC G N
L _
0.50 + 0.10
F F M M _
0.50 + 0.10
N 0.70 MIN
O 0.1 MAX
MAXIMUM RATING (Ta=25 )
1 2 3 1. GATE
2. DRAIN
CHARACTERISTIC SYMBOL RATING UNIT 3. SOURCE
O
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
DPAK (1)
@TC=25 2.3
ID
Drain Current @TC=100 1.46 A
Pulsed (Note1) IDP 7* KF3N60I
Single Pulsed Avalanche Energy EAS A H
120 mJ
(Note 2) C J DIM MILLIMETERS
_
D
Repetitive Avalanche Energy A 6.6 + 0.2
EAR 3.2 mJ B _
6.1 + 0.2
(Note 1)
C _
5.34 + 0.3
Peak Diode Recovery dv/dt
B
dv/dt 4.5 V/ns D _
0.7 + 0.2
(Note 3) E _
9.3 +0.3
Tc=25 44.6 W M F _
2.3 + 0.2
Drain Power
K
PD P G _
0.76 + 0.1
Dissipation Derate above 25 0.34 W/ N H _
2.3 + 0.1
J _
0.5+ 0.1
E
Maximum Junction Temperature Tj 150 K _
1.8 + 0.2
L _
0.5 + 0.1
Storage Temperature Range Tstg -55 150 G
M _
1.0 + 0.1
F F L
Thermal Characteristics N 0.96 MAX
P _
1.02 + 0.3
Thermal Resistance, Junction-to-Case RthJC 2.8 /W
Thermal Resistance, Junction-to- 1 2 3 1. GATE
RthJA 110 /W 2. DRAIN
Ambient
3. SOURCE
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
IPAK(1)
D
G
S
2012. 7. 12 Revision No : 1 1/7
KF3N60D/I
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.61 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.15A - 2.8 3.3
Dynamic
Total Gate Charge Qg - 8.5 -
VDS=480V, ID=3A
Gate-Source Charge Qgs - 1.8 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 3.6 -
Turn-on Delay time td(on) - 25 -
VDD=300V
Turn-on Rise time tr - 25 -
ID=3A ns
Turn-off Delay time td(off) - 40 -
RG=25 (Note4,5)
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 355 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 45 - pF
Reverse Transfer Capacitance Crss - 4.4 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 3
VGS
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