Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC kf3n80d_i
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download kf3n80d_i documenatation <<
Text preview - extract from the document
SEMICONDUCTOR KF3N80D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF3N80D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K
avalanche characteristics. It is mainly suitable for LED Lighting and L
DIM MILLIMETERS
C D A _
6.60 + 0.20
switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
FEATURES B E _
2.70 + 0.15
F _
2.30 + 0.10
VDSS= 800V, ID= 2.7A G 0.96 MAX
H 0.90 MAX
Drain-Source ON Resistance : RDS(ON)=4.2 @VGS = 10V H
J J _
1.80 + 0.20
E
K _
2.30 + 0.10
Qg(typ) =12nC G N
L _
0.50 + 0.10
F F M M _
0.50 + 0.10
N 0.70 MIN
O Max 0.1
MAXIMUM RATING (Ta=25 )
1 2 3
CHARACTERISTIC SYMBOL RATING UNIT
O
Drain-Source Voltage VDSS 800 V
Gate-Source Voltage VGSS 30 V
DPAK (1)
@TC=25 2.7
ID
Drain Current @TC=100 1.7 A
Pulsed (Note1) IDP 6* KF3N80I
Single Pulsed Avalanche Energy EAS A H
175 mJ
(Note 2) C J DIM MILLIMETERS
_
D
Repetitive Avalanche Energy A 6.6 + 0.2
EAR 4.4 mJ B _
6.1 + 0.2
(Note 1)
C _
5.34 + 0.3
Peak Diode Recovery dv/dt
B
dv/dt 4.5 V/ns D _
0.7 + 0.2
(Note 3) E _
9.3 +0.3
Tc=25 69.4 W M F _
2.3 + 0.2
Drain Power
K
PD P G _
0.76 + 0.1
Dissipation Derate above 25 0.55 W/ N H _
2.3 + 0.1
J _
0.5+ 0.1
E
Maximum Junction Temperature Tj 150 K _
1.8 + 0.2
L _
0.5 + 0.1
Storage Temperature Range Tstg -55 150 G
M _
1.0 + 0.1
F F L
Thermal Characteristics N 0.96 MAX
P _
1.02 + 0.3
Thermal Resistance, Junction-to-Case RthJC 1.8 /W
Thermal Resistance, Junction-to- 1 2 3 1. GATE
RthJA 110 /W 2. DRAIN
Ambient
3. SOURCE
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
IPAK(1)
D
G
S
2012. 8. 10 Revision No : 0 1/6
KF3N80D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 800 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.8 - V/
Drain Cut-off Current IDSS VDS=800V, VGS=0V - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.35A - 3.4 4.2
Dynamic
Total Gate Charge Qg - 12 -
VDS=480V, ID=3A
Gate-Source Charge Qgs - 6 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2 -
Turn-on Delay time td(on) - 25 -
VDD=400V
Turn-on Rise time tr - 27 -
ID=3A ns
Turn-off Delay time td(off) - 60 -
RG=25 (Note4,5)
Turn-off Fall time tf - 30 -
Input Capacitance Ciss - 520 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 60 - pF
Reverse Transfer Capacitance Crss - 9 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 3
VGS
◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo