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SEMICONDUCTOR KF10N60P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF10N60P
This planar stripe MOSFET has better characteristics, such as fast A
O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for active power factor
E G DIM MILLIMETERS
correction and switching mode power supplies. A _
9.9 + 0.2
B
B 15.95 MAX
Q C 1.3+0.1/-0.05
FEATURES I D _
0.8 + 0.1
E _
3.6 + 0.2
VDSS=600V, ID=10A K _
P F 2.8 + 0.1
Drain-Source ON Resistance : M G 3.7
L
H 0.5+0.1/-0.05
RDS(ON)(Max)=0.73 @VGS=10V J I 1.5
Qg(typ.)= 29.5nC D J _
13.08 + 0.3
N N H K 1.46
L _
1.4 + 0.1
MAXIMUM RATING (Tc=25 ) M _
1.27 + 0.1
N _
2.54 + 0.2
RATING O _
4.5 + 0.2
CHARACTERISTIC SYMBOL UNIT 1 2 3 P _
2.4 + 0.2
1. GATE
KF10N60P KF10N60F 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
TO-220AB
@TC=25 10 10*
ID
Drain Current @TC=100 6 6* A
KF10N60F
Pulsed (Note1) IDP 25 25*
A C
Single Pulsed Avalanche Energy EAS 400 mJ
(Note 2) F
O
Repetitive Avalanche Energy EAR 16.5 mJ
(Note 1) E DIM MILLIMETERS
B
A _
10.16 + 0.2
Peak Diode Recovery dv/dt
G
dv/dt 4.5 V/ns B _
15.87 + 0.2
(Note 3) C _
2.54 + 0.2
Tc=25 178 46 W D _
0.8 + 0.1
Drain Power
PD E _
3.18 + 0.1
Dissipation
K
Derate above 25 1.43 0.37 W/ F _
3.3 + 0.1
G _
12.57 + 0.2
Tj L
Maximum Junction Temperature 150 M
R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Storage Temperature Range Tstg -55 150 K _
3.23 + 0.1
D
L 1.47 MAX
Thermal Characteristics
M 1.47 MAX
N N H
RthJC N _
2.54 + 0.2
Thermal Resistance, Junction-to-Case 0.7 2.7 /W
O _
6.68 + 0.2
Thermal Resistance, Q _
4.7 + 0.2
RthJA 62.5 62.5 /W 1. GATE
R _
2.76 + 0.2
Junction-to-Ambient 1 2 3 2. DRAIN
Q
3. SOURCE
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
TO-220IS (1)
(KF10N60P, KF10N60F)
D
G
S
2010. 8. 16 Revision No : 0 1/7
KF10N60P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.6 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=5A - 0.59 0.73
Dynamic
Total Gate Charge Qg - 26 -
VDS=480V, ID=10A
Gate-Source Charge Qgs - 6 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 10 -
Turn-on Delay time td(on) - 32 -
VDD=300V
Turn-on Rise time tr - 35 -
ID=10A ns
Turn-off Delay time td(off) - 88 -
RG=25 (Note4,5)
Turn-off Fall time tf - 30 -
Input Capacitance Ciss - 1350 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 140 - pF
Reverse Transfer Capacitance Crss - 13 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 10
VGS
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