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SEMICONDUCTOR KF11N50P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF11N50P
A
This planar stripe MOSFET has better characteristics, such as fast O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for electronic ballast and
E G DIM MILLIMETERS
switching mode power supplies. A _
9.9 + 0.2
B B 15.95 MAX
Q C 1.3+0.1/-0.05
D _
FEATURES I 0.8 + 0.1
_
E 3.6 + 0.2
VDSS= 500V, ID= 11A K
F _
2.8 + 0.1
P G 3.7
Drain-Source ON Resistance : M H 0.5+0.1/-0.05
L
I 1.5
RDS(ON)=0.52 (Max) @VGS = 10V J _
J 13.08 + 0.3
Qg(typ.) = 26nC D K 1.46
L _
1.4 + 0.1
N N H
M _
1.27+ 0.1
N _
2.54 + 0.2
MAXIMUM RATING (Tc=25 ) O _
4.5 + 0.2
P _
2.4 + 0.2
RATING Q _
9.2 + 0.2
CHARACTERISTIC SYMBOL UNIT
1 2 3
KF11N50P KF11N50F 1. GATE
2. DRAIN
3. SOURCE
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
@TC=25 11 11* TO-220AB
ID
Drain Current @TC=100 7 7* A
KF11N50F
Pulsed (Note1) IDP 33 33*
Single Pulsed Avalanche Energy EAS A C
400 mJ
(Note 2)
F
Repetitive Avalanche Energy
O
EAR 6.6 mJ
(Note 1) E DIM MILLIMETERS
B
Peak Diode Recovery dv/dt A _
10.16 + 0.2
dv/dt 4.5 V/ns
G
(Note 3) B _
15.87 + 0.2
C _
2.54 + 0.2
Drain Power Tc=25 178 46.3 W D _
0.8 + 0.1
PD E _
3.18 + 0.1
Dissipation Derate above 25 1.43 0.37 W/
K
F _
3.3 + 0.1
G _
12.57 + 0.2
Maximum Junction Temperature Tj 150 L M _
R H 0.5 + 0.1
J
J _
13.0 + 0.5
Storage Temperature Range Tstg -55 150
K _
3.23 + 0.1
D
Thermal Characteristics L 1.47 MAX
M 1.47 MAX
N N H
Thermal Resistance, Junction-to-Case RthJC 0.7 2.7 /W N _
2.54 + 0.2
O _
6.68 + 0.2
Thermal Resistance, Junction-to- Q _
4.7 + 0.2
RthJA 62.5 62.5 /W R _
2.76 + 0.2
Ambient 1 2 3
Q
1. GATE
* : Drain current limited by maximum junction temperature. 2. DRAIN
3. SOURCE
EQUIVALENT CIRCUIT TO-220IS (1)
D
G
S
2011. 8. 31 Revision No : 0 1/7
KF11N50P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=5.5A - 0.42 0.52
Dynamic
Total Gate Charge Qg - 26 -
VDS=400V, ID=11A
Gate-Source Charge Qgs - 6.5 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 9.1 -
Turn-on Delay time td(on) - 45 -
VDD=250V
Turn-on Rise time tr - 35 -
ID=11A ns
Turn-off Delay time td(off) - 100 -
RG=25 (Note4,5)
Turn-off Fall time tf - 35 -
Input Capacitance Ciss - 1400 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 170 - pF
Reverse Transfer Capacitance Crss - 12 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 11
VGS
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