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SEMICONDUCTOR KF12N60P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF12N60P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=12A
Drain-Source ON Resistance :
RDS(ON)=0.6 (Max) @VGS=10V
Qg(typ.)= 36nC
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC SYMBOL UNIT
KF12N60P KF12N60F
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
@TC=25 12 12*
ID
Drain Current @TC=100 7.4 7.4* A
KF12N60F
Pulsed (Note1) IDP 33 33*
Single Pulsed Avalanche Energy EAS 450 mJ
(Note 2)
Repetitive Avalanche Energy EAR 17 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 215 49.8 W
PD
Dissipation Derate above 25 1.72 0.4 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.58 2.51 /W
Thermal Resistance,
RthJA 62.5 62.5 /W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.
EQUIVALENT CIRCUIT
2010. 8. 12 Revision No : 3 1/7
KF12N60P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.63 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=6A - 0.51 0.6
Dynamic
Total Gate Charge Qg - 36 -
VDS=480V, ID=12A
Gate-Source Charge Qgs - 8.5 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 13.5 -
Turn-on Delay time td(on) - 30 -
VDD=300V
Turn-on Rise time tr - 40 -
ID=12A ns
Turn-off Delay time td(off) - 115 -
RG=25 (Note4,5)
Turn-off Fall time tf - 55 -
Input Capacitance Ciss - 1700 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 185 - pF
Reverse Transfer Capacitance Crss - 20 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 12
VGS
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