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SEMICONDUCTOR KF13N60N
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
A
This planar stripe MOSFET has better characteristics, such as fast N Q B
O K
switching time, low on resistance, low gate charge and excellent
DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for switching mode _
F
A 15.60 + 0.20
B _
4.80 + 0.20
power supplies. C _
19.90 + 0.20
C
J
R
D _
2.00 + 0.20
I
H
d _
1.00 + 0.20
E _
3.00 + 0.20
F _
3.80 + 0.20
FEATURES
G
G _
3.50 + 0.20
D H _
13.90 + 0.20
VDSS(Min.)= 600V, ID= 13A E _
I 12.76 + 0.20
Drain-Source ON Resistance : J _
23.40 + 0.20
L
d M K 1.5+0.15-0.05
RDS(ON)=0.56(Max.) @VGS =10V L _
16.50 + 0.30
M _
1.40 + 0.20
Qg(typ.) =36nC N _
13.60 + 0.20
P P T
O _
9.60 + 0.20
P _
5.45 + 0.30
Q _
3.20 + 0.10
1 2 3 _
R 18.70 + 0.20
MAXIMUM RATING (Tc=25 ) T 0.60+0.15-0.05
1. Gate
CHARACTERISTIC SYMBOL RATING UNIT 2. Drain
3. Source
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V TO-3P(N)-E
@TC=25 ID 13
Drain Current A
Pulsed (Note1) IDP 32
Single Pulsed Avalanche Energy (Note 2) EAS 870 mJ
Repetitive Avalanche Energy (Note 1) EAR 22.5 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Drain Power Tc=25 215 W
PD
Dissipation Derate above25 1.72 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.58 /W
Thermal Resistance, Junction-to-Ambient RthJA 40 /W
Marking
D
1 KF13N60
N 801 2
G
S
1 PRODUCT NAME
2 LOT NO
2008. 10. 2 Revision No : 1 1/6
KF13N60N
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.63 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=6.5A - 0.47 0.56
Dynamic
Total Gate Charge Qg - 36 -
VDS=480V, ID=13A
Gate-Source Charge Qgs - 8.5 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 13.5 -
Turn-on Delay time td(on) - 30 -
VDD=300V,
Turn-on Rise time tr RG=25 , - 40 -
ns
Turn-off Delay time td(off) ID=13A - 115 -
tf (Note4,5)
Turn-off Fall time - 55 -
Input Capacitance Ciss - 1445 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 185 - pF
Reverse Transfer Capacitance Crss - 20 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 13
VGS
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