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SEMICONDUCTOR KF2N60L
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
B D
This planar stripe MOSFET has better characteristics, such as fast DIM MILLIMETERS
A 7.20 MAX
switching time, low on resistance, low gate charge and excellent B 5.20 MAX
A
C 0.60 MAX
avalanche characteristics. It is mainly suitable for switching mode P
DEPTH:0.2 D 2.50 MAX
E 1.15 MAX
power supplies. F 1.27
C
G
S G 1.70 MAX
Q H 0.55 MAX
K J _
14.00 + 0.50
J
K 0.35 MIN
FEATURES
R
L _
0.75 + 0.10
F F
VDSS= 600V, ID= 0.70A M 4
N 25
RDS(ON)=4.4 (Max) @VGS = 10V H H H O 1.25
P 1.50
Qg(typ) = 6.0nC M E M
Q 0.10 MAX
R _
12.50 + 0.50
D
1 2 3 L S 1.00
O
H
N N
1. EMITTER
MAXIMUM RATING (Tc=25 ) 2. COLLECTOR
3. BASE
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 600 V TO-92L
Gate-Source Voltage VGSS 30 V
TC=25 0.70
ID
Drain Current TC=100 0.44 A
Pulsed (Note1) IDP 4.0
Single Pulsed Avalanche Energy EAS 60 mJ
(Note 2)
Repetitive Avalanche Energy PIN CONNECTION
EAR 1.5 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns D
(Note 3)
Tc=25 5.4 W
Drain Power
Derate above 25 PD 0.043 W/
Dissipation
Ta=25 1 W G
Maximum Junction Temperature Tj 150
S
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 23 /W
Thermal Resistance, Junction-to-
RthJA 125 /W
Ambient
2013. 1. 14 Revision No : 0 1/6
KF2N60L
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.6 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=0.35A - 3.7 4.4
Dynamic
Total Gate Charge Qg - 6.0 -
VDS=480V, ID=2A
Gate-Source Charge Qgs - 1.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2.8 -
Turn-on Delay time td(on) - 10 -
VDD=300V
Turn-on Rise time tr - 20 -
ID=2A ns
Turn-off Delay time td(off) - 25 -
RG=25 (Note4,5)
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 270 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 35 - pF
Reverse Transfer Capacitance Crss - 3.9 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 0.7
VGS
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