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SEMICONDUCTOR KF7N68F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
A C
This planar stripe MOSFET has better characteristics, such as fast
F
switching time, low on resistance, low gate charge and excellent
O
avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS
B
A _
10.16 + 0.2
G
correction and switching mode power supplies. B _
15.87 + 0.2
C _
2.54 + 0.2
D _
0.8 + 0.1
E _
3.18 + 0.1
K
FEATURES F _
3.3 + 0.1
G _
12.57 + 0.2
VDSS=680V, ID=7A L M H _
0.5 + 0.1
R
J
Drain-Source ON Resistance : J _
13.0 + 0.5
K _
3.23 + 0.1
RDS(ON)(Max)=1.25 @VGS=10V D
L 1.47 MAX
Qg(typ.)= 24nC N N
M 1.47 MAX
H
N _
2.54 + 0.2
O _
6.68 + 0.2
Q _
4.7 + 0.2
1. GATE
2. DRAIN R _
2.76 + 0.2
Q
1 2 3
3. SOURCE
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 680 V TO-220IS (1)
Gate-Source Voltage VGSS 30 V
@TC=25 7*
ID PIN CONNECTION
Drain Current @TC=100 4.2* A
D
Pulsed (Note1) IDP 18*
Single Pulsed Avalanche Energy EAS 212 mJ
(Note 2)
Repetitive Avalanche Energy EAR 1.6 mJ G
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
S
Drain Power Tc=25 52 W
PD
Dissipation Derate above 25 0.42 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.4 /W
Thermal Resistance,
RthJA 62.5 /W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.
2012. 9. 27 Revision No : 0 1/6
KF7N68F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 680 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.65 - V/
Drain Cut-off Current IDSS VDS=680V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.5A - 1.0 1.25
Dynamic
Total Gate Charge Qg - 24 -
VDS=520V, ID=7.0A
Gate-Source Charge Qgs - 5.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 9.5 -
Turn-on Delay time td(on) - 30 -
VDD=325V
Turn-on Rise time tr - 30 -
ID=7.0A ns
Turn-off Delay time td(off) - 50 -
RG=25 (Note4,5)
Turn-off Fall time tf - 25 -
Input Capacitance Ciss - 1010 -
Output Capacitance Coss - 111 - pF
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance Crss - 7.0 -
Gate Resistance Rg - 2.5 5
Source-Drain Diode Ratings
Continuous Source Current IS - - 7
VGS
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