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kf7n80p-f


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                                   SEMICONDUCTOR                                                                        KF7N80P/F
                                                                                                                    N CHANNEL MOS FIELD
                                              TECHNICAL DATA                                                         EFFECT TRANSISTOR


 General Description
                                                                                                                                KF7N80P

    This planar stripe MOSFET has better characteristics, such as fast                                      A
                                                                                                                                         O
                                                                                                                                             C
 switching time, low on resistance, low gate charge and excellent
                                                                                                                            F
 avalanche characteristics. It is mainly suitable for active power factor
                                                                                            E                               G                    DIM MILLIMETERS
 correction and switching mode power supplies.                                                                                                    A        _
                                                                                                                                                       9.9 + 0.2
                                                                                                                                B
                                                                                                                                                 B         15.95 MAX
                                                                                                                            Q                    C        1.3+0.1/-0.05
 FEATURES                                                                                   I                                                    D               _
                                                                                                                                                             0.8 + 0.1
                                                                                                                                                 E                _
                                                                                                                                                              3.6 + 0.2
    VDSS=800V, ID=7A                                                                        K                                                                     _
                                                                                                                                         P        F          2.8 + 0.1
    Drain-Source ON Resistance :                                                                        M                                        G               3.7
                                                                                                                        L
                                                                                                                                                 H        0.5+0.1/-0.05
    RDS(ON)(Max)=1.45     @VGS=10V                                                                                               J                I              1.5
    Qg(typ.)= 45nC                                                                              D                                                 J               _
                                                                                                                                                           13.08 + 0.3
                                                                                                        N       N                            H   K             1.46
                                                                                                                                                  L             _
                                                                                                                                                            1.4 + 0.1
 MAXIMUM RATING (Tc=25                    )                                                                                                      M               _
                                                                                                                                                            1.27 + 0.1
                                                                                                                                                 N               _
                                                                                                                                                            2.54 + 0.2
                                                               RATING                                                                            O              _
                                                                                                                                                            4.5 + 0.2
              CHARACTERISTIC                  SYMBOL                             UNIT               1       2       3                             P              _
                                                                                                                                                            2.4 + 0.2
                                                                                                                                1. GATE
                                                       KF7N80P         KF7N80F                                                  2. DRAIN         Q              _
                                                                                                                                                            9.2 + 0.2
                                                                                                                                3. SOURCE
   Drain-Source Voltage                        VDSS              800              V
   Gate-Source Voltage                         VGSS               30              V
                                                                                                                                TO-220AB
                     @TC=25                              7               7*
                                                ID
   Drain Current     @TC=100                             4.4             4.4*     A
                                                                                                                                KF7N80F
                     Pulsed (Note1)             IDP      20              20*
                                                                                                            A                                C
  Single Pulsed Avalanche Energy               EAS               360              mJ
  (Note 2)                                                                                                              F



                                                                                                                                     O
  Repetitive Avalanche Energy                  EAR               11               mJ
  (Note 1)                                                                              E                                                             DIM    MILLIMETERS
                                                                                                                            B


                                                                                                                                                      A              _
                                                                                                                                                              10.16 + 0.2
  Peak Diode Recovery dv/dt
                                                                                                                        G




                                               dv/dt             4.5             V/ns                                                                 B              _
                                                                                                                                                              15.87 + 0.2
  (Note 3)                                                                                                                                            C             _
                                                                                                                                                               2.54 + 0.2
                     Tc=25                              160              44.6     W                                                                   D            _
                                                                                                                                                               0.8 + 0.1
   Drain Power
                                                PD                                                                                                    E              _
                                                                                                                                                                3.18 + 0.1
   Dissipation
                                                                                        K




                     Derate above 25                    1.28             0.36    W/                                                                   F            _
                                                                                                                                                               3.3 + 0.1
                                                                                                                                                      G              _
                                                                                                                                                              12.57 + 0.2
                                                Tj                                          L
   Maximum Junction Temperature                                  150                                            M
                                                                                                                                             R        H            _
                                                                                                                                                               0.5 + 0.1
                                                                                                                            J




                                                                                                                                                      J             _
                                                                                                                                                              13.0 + 0.5
   Storage Temperature Range                   Tstg            -55 150                                                                                K            _
                                                                                                                                                              3.23 + 0.1
                                                                                            D
                                                                                                                                                      L       1.47 MAX
   Thermal Characteristics
                                                                                                                                                      M       1.47 MAX
                                                                                                        N       N                    H
                                               RthJC                                                                                                  N            _
                                                                                                                                                              2.54 + 0.2
   Thermal Resistance, Junction-to-Case                 0.78             2.8      /W
                                                                                                                                                      O            _
                                                                                                                                                              6.68 + 0.2
   Thermal Resistance,                                                                                                                                Q            _
                                                                                                                                                               4.7 + 0.2
                                               RthJA    62.5             62.5     /W                                                 1. GATE
                                                                                                                                                      R            _
                                                                                                                                                              2.76 + 0.2
   Junction-to-Ambient                                                                                                               2. DRAIN
                                                                                        Q




                                                                                                    1       2       3
                                                                                                                                     3. SOURCE
 * : Drain current limited by maximum junction temperature.



                                                                                                                        TO-220IS (1)
  PIN CONNECTION
                          D




                 G



                          S




2012. 3. 29                    Revision No : 0                                                                                                                               1/3
                                                                          KF7N80P/F

 ELECTRICAL CHARACTERISTICS (Tc=25 )
                CHARACTERISTIC                                  SYMBOL                  TEST CONDITION            MIN.   TYP.   MAX.   UNIT

   Static
   Drain-Source Breakdown Voltage                                BVDSS          ID=250 A, VGS=0V                  800     -       -     V
   Breakdown Voltage Temperature Coefficient                    BVDSS/ Tj       ID=250 A, Referenced to 25         -     0.65     -    V/
   Drain Cut-off Current                                          IDSS          VDS=800V, VGS=0V                   -      -      10     A
   Gate Threshold Voltage                                          Vth          VDS=VGS, ID=250 A                 2.5     -      4.5    V
   Gate Leakage Current                                           IGSS          VGS= 30V, VDS=0V                   -      -      100   nA
   Drain-Source ON Resistance                                   RDS(ON)         VGS=10V, ID=3.5A                   -     1.2    1.45
   Dynamic
   Total Gate Charge                                               Qg                                              -      45      -
                                                                                VDS=480V, ID=7A
   Gate-Source Charge                                              Qgs                                             -      8       -     nC
                                                                                VGS=10V               (Note4,5)
   Gate-Drain Charge                                              Qgd                                              -      20      -
   Turn-on Delay time                                             td(on)                                           -      50      -
                                                                                VDD=300V
   Turn-on Rise time                                                tr                                             -      50      -
                                                                                ID=7A                                                   ns
   Turn-off Delay time                                            td(off)                                          -     120      -
                                                                                RG=25                 (Note4,5)
   Turn-off Fall time                                               tf                                             -      50      -
   Input Capacitance                                              Ciss                                             -     1450     -
   Output Capacitance                                             Coss          VDS=25V, VGS=0V, f=1.0MHz          -     150      -     pF
   Reverse Transfer Capacitance                                   Crss                                             -      20      -
   Source-Drain Diode Ratings
   Continuous Source Current                                        IS                                             -      -      7
                                                                                VGS


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