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SEMICONDUCTOR KF4N65P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF4N65P
This planar stripe MOSFET has better characteristics, such as fast A
O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for active power factor
E G DIM MILLIMETERS
correction and switching mode power supplies. A _
9.9 + 0.2
B
B 15.95 MAX
Q C 1.3+0.1/-0.05
FEATURES I D _
0.8 + 0.1
E _
3.6 + 0.2
VDSS=650V, ID=3.6A
K P F _
2.8 + 0.1
Drain-Source ON Resistance : M G 3.7
L
H 0.5+0.1/-0.05
RDS(ON)(Max)=2.5 @VGS=10V J I 1.5
Qg(typ.)= 12nC D J _
13.08 + 0.3
N N H K 1.46
L _
1.4 + 0.1
MAXIMUM RATING (Tc=25 ) M _
1.27 + 0.1
N _
2.54 + 0.2
RATING O _
4.5 + 0.2
CHARACTERISTIC SYMBOL UNIT P _
2.4 + 0.2
1 2 3 1. GATE
KF4N65P KF4N65F 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS 30 V
TO-220AB
@TC=25 3.6 3.6*
ID
Drain Current @TC=100 2.3 2.3* A
IDP KF4N65F
Pulsed (Note1) 8.4 8.4*
A C
Single Pulsed Avalanche Energy EAS 103 mJ
(Note 2) F
O
Repetitive Avalanche Energy EAR 3.1 mJ
(Note 1) E DIM MILLIMETERS
B
A _
10.16 + 0.2
Peak Diode Recovery dv/dt
G
dv/dt 4.5 V/ns B _
15.87 + 0.2
(Note 3) _
C 2.54 + 0.2
Tc=25 83.3 37.9 W D _
0.8 + 0.1
Drain Power
PD E _
3.18 + 0.1
Dissipation Derate above 25 0.67 0.30 W/
K
F _
3.3 + 0.1
G _
12.57 + 0.2
Maximum Junction Temperature Tj 150 L M
R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Storage Temperature Range Tstg -55 150 _
K 3.23 + 0.1
D
L 1.47 MAX
Thermal Characteristics
M 1.47 MAX
N N H
Thermal Resistance, Junction-to-Case RthJC 1.5 3.3 /W N _
2.54 + 0.2
O _
6.68 + 0.2
Thermal Resistance, Q _
4.7 + 0.2
RthJA 62.5 62.5 /W 1. GATE
_
Junction-to-Ambient 1 2 3 2. DRAIN R 2.76 + 0.2
Q
3. SOURCE
* : Drain current limited by maximum junction temperature.
* Single Gauge Lead Frame
TO-220IS (1)
PIN CONNECTION
D
G
S
2011. 6. 21 Revision No : 0 1/7
KF4N65P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 650 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.65 - V/
Drain Cut-off Current IDSS VDS=650V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.8A - 2.1 2.5
Dynamic
Total Gate Charge Qg - 12 -
VDS=520V, ID=3.6A
Gate-Source Charge Qgs - 2.5 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.0 -
Turn-on Delay time td(on) - 20 -
VDD=325V
Turn-on Rise time tr - 15 -
ID=3.6A ns
Turn-off Delay time td(off) - 45 -
RG=25 (Note4,5)
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 510 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 60 - pF
Reverse Transfer Capacitance Crss - 6.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 3.6
VGS
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