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SEMICONDUCTOR KF4N20LW
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
VDSS(Min.)= 200V, ID= 1A
Drain-Source ON Resistance : RDS(ON)=1.05 (max) @VGS =10V
Qg(typ.) =2.9nC
Vth(Max.)= 2V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 200 V
Gate-Source Voltage VGSS 20 V
@TC=25 1*
ID
Drain Current @TC=100 0.6* A
Pulsed (Note1) IDP 4*
Single Pulsed Avalanche Energy
EAS 52 mJ
(Note 2)
Repetitive Avalanche Energy
EAR 0.2 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 5.5 V/ns
(Note 3)
Drain Power TA=25 2.2* W
PD
Dissipation Derate above25 0.018 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-
RthJA 57* /W
Ambient
* : Surface Mounted on FR4 Board (40mm 40mm, 1.0t)
PIN CONNECTION
2010. 8. 18 Revision No : 0 1/6
KF4N20LW
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 200 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.2 - V/
Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 2.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
VGS=10V, ID=0.5A - 0.85 1.05
Drain-Source ON Resistance RDS(ON)
VGS=5V, ID=0.5A 0.89 1.10
Dynamic
Total Gate Charge Qg - 2.9 3.8
VDS=150V, ID=3.6A
Gate-Source Charge Qgs - 0.6 - nC
VGS=5V (Note4,5)
Gate-Drain Charge Qgd - 2.2 -
Turn-on Delay time td(on) - 10 -
VDD=100V, ID=3.6A
Turn-on Rise time tr - 20 -
RG=25 (Note4,5) ns
Turn-off Delay time td(off) - 15 -
VGS=5V
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 170 220
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 25 - pF
Reverse Transfer Capacitance Crss - 4.0 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 1
VGS
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