Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC kf4n20ld_i
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download kf4n20ld_i documenatation <<
Text preview - extract from the document
SEMICONDUCTOR KF4N20LD/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF4N20LD
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for LED Lighting and C D L
A _
6.60 + 0.20
B _
6.10 + 0.20
switching mode power supplies. C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
_
FEATURES F 2.30 + 0.10
G 0.96 MAX
VDSS(Min.)= 200V, ID= 3.6A H
H 0.90 MAX
J J _
1.80 + 0.20
E
Drain-Source ON Resistance : RDS(ON)=1.15 (max) @VGS =10V G N K _
2.30 + 0.10
L 0.50 +_ 0.10
Qg(typ.) =2.9nC F F M M _
0.50 + 0.10
N 0.70 MIN
Vth(Max.)= 2V
1 2 3
MAXIMUM RATING (Tc=25 ) 1. GATE
2. DRAIN
CHARACTERISTIC SYMBOL RATING UNIT 3. SOURCE
Drain-Source Voltage VDSS 200 V
Gate-Source Voltage VGSS 20 V
@TC=25 3.6 DPAK (1)
ID
Drain Current @TC=100 2.2 A
Pulsed (Note1) IDP 7*
Single Pulsed Avalanche Energy
EAS 52 mJ
(Note 2)
Repetitive Avalanche Energy KF4N20LI
EAR 3 mJ A
(Note 1) H
C J
Peak Diode Recovery dv/dt
D
dv/dt 5.5 V/ns
(Note 3)
Drain Power TC=25 31 W
B
DIM MILLIMETERS
PD A _
6.6 + 0.2
Dissipation Derate above25 0.25 W/ _
6.1 + 0.2
M B
K
C _
5.34 + 0.3
Maximum Junction Temperature Tj 150 P
D _
0.7 + 0.2
N
E _
9.3 +0.3
Storage Temperature Range Tstg -55 150
E
F _
2.3 + 0.2
G _
0.76 + 0.1
Thermal Characteristics G H _
2.3 + 0.1
L J _
0.5 + 0.1
Thermal Resistance, Junction-to-Case RthJC 4.0 /W F F
K _
1.8 + 0.2
Thermal Resistance, Junction-to- L _
0.5 + 0.1
RthJA 110 /W M _
1.0 + 0.1
Ambient 1 2 3 N 0.96 MAX
* : Drain current limited by maximum junction temperature. 1. GATE P _
1.02 + 0.3
2. DRAIN
3. SOURCE
PIN CONNECTION
IPAK(1)
2012. 1. 18 Revision No : 1 1/6
KF4N20LD/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 200 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.2 - V/
Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 2.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
VGS=10V, ID=1.8A - 0.85 1.15
Drain-Source ON Resistance RDS(ON)
VGS=5V, ID=1.8A 0.89 1.20
Dynamic
Total Gate Charge Qg - 2.9 3.8
VDS=160V, ID=3.6A
Gate-Source Charge Qgs - 0.6 - nC
VGS=5V (Note4,5)
Gate-Drain Charge Qgd - 2.2 -
Turn-on Delay time td(on) - 10 -
VDD=100V, ID=3.6A
Turn-on Rise time tr - 20 -
RG=25 (Note4,5) ns
Turn-off Delay time td(off) - 15 -
VGS=5V
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 170 220
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 25 - pF
Reverse Transfer Capacitance Crss - 4.0 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 1
VGS
◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo