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SEMICONDUCTOR KF5N53DZ/DS
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
A K DIM MILLIMETERS
charge and excellent avalanche characteristics. It is mainly suitable for C D L
A _
6.60 + 0.20
electronic ballast and switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
E _
2.70 + 0.15
FEATURES B
F _
2.30 + 0.10
G 0.96 MAX
VDSS= 525V, ID= 4.1A
H 0.90 MAX
H
Drain-Source ON Resistance : RDS(ON)=1.5 (Max) @VGS = 10V J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Qg(typ) = 12nC L _
0.50 + 0.10
F F M M _
0.50 + 0.10
trr(typ) = 150ns (KF5N53DS) N 0.70 MIN
trr(typ) = 300ns (KF5N53DZ) O 0.1 MAX
1 2 3 1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Tc=25 )
O
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 525 V
Gate-Source Voltage VGSS 30 V
DPAK (1)
@TC=25 4.1
ID
Drain Current @TC=100 2.6 A
Pulsed (Note1) IDP 13
Single Pulsed Avalanche Energy EAS 270 mJ
(Note 2)
Repetitive Avalanche Energy EAR 8.6 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 20 V/ns
(Note 3)
Drain Power Tc=25 59.5 W
PD
Dissipation Derate above 25 0.48 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.1 /W
Thermal Resistance, Junction-to-
RthJA 110 /W
Ambient
PIN CONNECTION
(KF5N53DZ/DS)
D
G
S
2011. 3. 16 Revision No : 0 1/6
KF5N53DZ/DS
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 525 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.57 - V/
Drain Cut-off Current IDSS VDS=525V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.15A - 1.35 1.5
Dynamic
Total Gate Charge Qg - 12 -
VDS=400V, ID=5A
Gate-Source Charge Qgs - 2.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.4 -
Turn-on Delay time td(on) - 22.5 -
VDD=250V
Turn-on Rise time tr - 29 -
ID=5A ns
Turn-off Delay time td(off) - 58 -
RG=25 (Note4,5)
Turn-off Fall time tf - 18 -
Input Capacitance Ciss - 430 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 71 - pF
Reverse Transfer Capacitance Crss - 7.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS
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