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SEMICONDUCTOR KF5N50D/DZ
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for electronic ballast and C D L
A _
6.60 + 0.20
switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
E _
2.70 + 0.15
FEATURES B
F _
2.30 + 0.10
G 0.96 MAX
VDSS= 500V, ID= 4.3A
H 0.90 MAX
H
Drain-Source ON Resistance : RDS(ON)=1.4 (Max) @VGS = 10V J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Qg(typ) = 12nC L _
0.50 + 0.10
F F M M _
0.50 + 0.10
N 0.70 MIN
MAXIMUM RATING (Tc=25 ) O 0.1 MAX
CHARACTERISTIC SYMBOL RATING UNIT 1 2 3 1. GATE
2. DRAIN
3. SOURCE
Drain-Source Voltage VDSS 500 V
O
Gate-Source Voltage VGSS 30 V
@TC=25 4.3
ID
Drain Current @TC=100 2.7 A
DPAK (1)
Pulsed (Note1) IDP 13
Single Pulsed Avalanche Energy EAS 270 mJ
(Note 2)
Repetitive Avalanche Energy EAR 8.6 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 20 V/ns
(Note 3)
Drain Power Tc=25 59.5 W
PD
Dissipation Derate above 25 0.48 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.1 /W
Thermal Resistance, Junction-to-
RthJA 110 /W
Ambient
PIN CONNECTION
(KF5N50D) (KF5N50DZ)
D D
G
G
S S
2008. 12. 3 Revision No : 1 1/6
KF5N50D/DZ
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.0 - 4.0 V
KF5N50D VGS= 30V, VDS=0V - - 100 nA
Gate Leakage Current IGSS
KF5N50DZ VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.5A - 1.10 1.4
Dynamic
Total Gate Charge Qg - 12 -
VDS=400V, ID=5A
Gate-Source Charge Qgs - 3.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 4.5 -
Turn-on Delay time td(on) - 23 -
VDD=250V
Turn-on Rise time tr - 17 -
RL=50 ns
Turn-off Delay time td(off) - 40 -
RG=25 (Note4,5)
Turn-off Fall time tf - 13 -
KF5N50D VDS=25V, VGS=0V, - 510 -
Input Capacitance Ciss
KF5N50DZ f=1.0MHz - 440 -
pF
Output Capacitance Coss - 69 -
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance Crss - 6 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS
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