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SEMICONDUCTOR KF5N50P/F/PZ/FZ
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF5N50P, KF5N50PZ
A
This planar stripe MOSFET has better characteristics, such as fast O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for electronic ballast and
E G DIM MILLIMETERS
switching mode power supplies. A _
9.9 + 0.2
B B 15.95 MAX
Q C 1.3+0.1/-0.05
_
FEATURES I D
E
0.8 + 0.1
_
3.6 + 0.2
VDSS= 500V, ID= 5.0A K
F _
2.8 + 0.1
P G 3.7
Drain-Source ON Resistance : RDS(ON)=1.4 @VGS = 10V M H 0.5+0.1/-0.05
L
I 1.5
Qg(typ) = 12nC J J _
13.08 + 0.3
D K 1.46
L _
1.4 + 0.1
N N H
M _
1.27+ 0.1
N _
2.54 + 0.2
MAXIMUM RATING (Tc=25 ) O _
4.5 + 0.2
P _
2.4 + 0.2
RATING Q _
9.2 + 0.2
CHARACTERISTIC SYMBOL KF5N50P KF5N50F UNIT 1 2 3 1. GATE
2. DRAIN
KF5N50PZ KF5N50FZ 3. SOURCE
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V TO-220AB
@TC=25 5.0 5.0*
ID
Drain Current @TC=100 2.9 2.9* A
KF5N50F, KF5N50FZ
Pulsed (Note1) IDP 13 13*
A C
Single Pulsed Avalanche Energy EAS 270 mJ
(Note 2) S
F
P
Repetitive Avalanche Energy EAR E DIM MILLIMETERS
8.6 mJ
(Note 1) A _
10.0 + 0.3
B
B _
G
Peak Diode Recovery dv/dt 15.0 + 0.3
dv/dt 4.5 V/ns C _
2.70 + 0.3
(Note 3)
D 0.76+0.09/-0.05
Drain Power Tc=25 83 41.5 W E 3.2 +0.2
_
PD L L F _
3.0 + 0.3
Dissipation
K
R
Derate above 25 0.66 0.33 W/ G _
12.0 + 0.3
M H 0.5+0.1/-0.05
Maximum Junction Temperature Tj 150
J
D D J _
13.6 + 0.5
K _
3.7 + 0.2
Storage Temperature Range Tstg -55 150
L 1.2+0.25/-0.1
Thermal Characteristics N N
M 1.5+0.25/-0.1
H N _
2.54 +0.1
Thermal Resistance, Junction-to-Case RthJC 1.5 3.0 /W P _
6.8 + 0.1
Q _
4.5 + 0.2
Thermal Resistance, Junction-to- R _
2.6 + 0.2
RthJA 62.5 62.5 /W
Ambient 0.5 Typ
Q
1 2 3 S
1. GATE
* : Drain current limited by maximum junction temperature. 2. DRAIN
3. SOURCE
PIN CONNECTION
TO-220IS
(KF5N50P, KF5N50F) (KF5N50PZ, KF5N50FZ)
D D
G
G
S S
2008. 11. 19 Revision No : 0 1/7
KF5N50P/F/PZ/FZ
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.0 - 4.0 V
KF5N50P/F VGS= 30V, VDS=0V - - 100 nA
Gate Leakage Current IGSS
KF5N50PZ/FZ VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.5A - 1.15 1.4
Dynamic
Total Gate Charge Qg - 12 -
VDS=400V, ID=5A
Gate-Source Charge Qgs - 2.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.4 -
Turn-on Delay time td(on) - 22.5 -
VDD=250V
Turn-on Rise time tr - 29 -
RL=50 ns
Turn-off Delay time td(off) - 58 -
RG=25 (Note4,5)
Turn-off Fall time tf - 18 -
Input Capacitance Ciss - 430 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 71 - pF
Reverse Transfer Capacitance Crss - 7.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS
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