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SEMICONDUCTOR KF5N50PS/FS
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF5N50PS
A
This planar stripe MOSFET has better characteristics, such as fast O
C
switching time, fast reverse recovery time, low on resistance, low gate
F
charge and excellent avalanche characteristics. It is mainly suitable for
E G DIM MILLIMETERS
electronic ballast and switching mode power supplies. A _
9.9 + 0.2
B B 15.95 MAX
Q C 1.3+0.1/-0.05
D _
FEATURES I
E
0.8 + 0.1
_
3.6 + 0.2
VDSS= 500V, ID= 5.0A K
F _
2.8 + 0.1
P G 3.7
Drain-Source ON Resistance : RDS(ON)=1.4 @VGS = 10V M H 0.5+0.1/-0.05
L
I 1.5
Qg(typ) = 12nC J J _
13.08 + 0.3
trr(typ) = 150ns D K 1.46
L _
1.4 + 0.1
N N H
M _
1.27+ 0.1
N _
2.54 + 0.2
MAXIMUM RATING (Tc=25 ) O _
4.5 + 0.2
P _
2.4 + 0.2
RATING Q _
9.2 + 0.2
CHARACTERISTIC SYMBOL UNIT 1 2 3 1. GATE
KF5N50PS KF5N50FS 2. DRAIN
3. SOURCE
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
TO-220AB
@TC=25 5.0 5.0*
ID
Drain Current @TC=100 2.9 2.9* A
KF5N50FS
Pulsed (Note1) IDP 13 13*
Single Pulsed Avalanche Energy EAS A C
270 mJ
(Note 2) F
Repetitive Avalanche Energy
O
EAR 8.6 mJ
(Note 1) E DIM MILLIMETERS
B
Peak Diode Recovery dv/dt A _
10.16 + 0.2
dv/dt 20 V/ns
G
(Note 3) B _
15.87 + 0.2
C _
2.54 + 0.2
Drain Power Tc=25 83 41.5 W D _
0.8 + 0.1
PD E _
3.18 + 0.1
Dissipation Derate above 25 0.66 0.33 W/
K
F _
3.3 + 0.1
G _
12.57 + 0.2
Maximum Junction Temperature Tj 150 L M H _
0.5 + 0.1
R
J
J _
13.0 + 0.5
Storage Temperature Range Tstg -55 150 K _
3.23 + 0.1
D
L 1.47 MAX
Thermal Characteristics
M 1.47 MAX
N N H
Thermal Resistance, Junction-to-Case RthJC 1.5 3.0 N _
2.54 + 0.2
/W
O _
6.68 + 0.2
Thermal Resistance, Junction-to- Q _
4.7 + 0.2
RthJA 62.5 62.5 /W R _
2.76 + 0.2
Ambient 1. GATE
Q
1 2 3
2. DRAIN
3. SOURCE
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
TO-220IS (1)
(KF5N50PS, KF5N50FS)
D
G
S
2010. 8. 12 Revision No : 1 1/7
KF5N50PS/FS
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.0 - 4.0 V
Gate Leakage Current IGSS KF5N50PS/FS VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.5A - 1.15 1.4
Dynamic
Total Gate Charge Qg - 12 -
VDS=400V, ID=5A
Gate-Source Charge Qgs - 2.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.4 -
Turn-on Delay time td(on) - 22.5 -
VDD=250V
Turn-on Rise time tr - 29 -
RL=50 ns
Turn-off Delay time td(off) - 58 -
RG=25 (Note4,5)
Turn-off Fall time tf - 18 -
Input Capacitance Ciss - 430 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 71 - pF
Reverse Transfer Capacitance Crss - 7.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS
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