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SEMICONDUCTOR KF5N60D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF5N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
A K DIM MILLIMETERS
charge and excellent avalanche characteristics. It is mainly suitable for C D L
A _
6.60 + 0.20
electronic ballast and switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
E _
2.70 + 0.15
FEATURES B
F _
2.30 + 0.10
G 0.96 MAX
VDSS= 600V, ID= 3.5A
H 0.90 MAX
H
Drain-Source ON Resistance : RDS(ON)=2.0 (Max) @VGS = 10V J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Qg(typ) = 11nC L _
0.50 + 0.10
F F M M _
0.50 + 0.10
N 0.70 MIN
O 0.1 MAX
1 2 3
1. GATE
2. DRAIN
MAXIMUM RATING (Tc=25 ) 3. SOURCE
O
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
DPAK (1)
@TC=25 3.5
ID
Drain Current @TC=100 2.2 A
Pulsed (Note1) IDP 13 KF5N60I
A H
Single Pulsed Avalanche Energy EAS 140 mJ C J
(Note 2)
D
Repetitive Avalanche Energy EAR 3.5 mJ
(Note 1)
B
DIM MILLIMETERS
Peak Diode Recovery dv/dt _
6.6 + 0.2
dv/dt 4.5 V/ns A
(Note 3) B _
6.1 + 0.2
M
K
C _
5.34 + 0.3
Drain Power Tc=25 59.5 W P
PD N D _
0.7 + 0.2
Dissipation Derate above 25 0.48 W/ E _
9.3 +0.3
E
F _
2.3 + 0.2
Maximum Junction Temperature Tj 150 G _
0.76 + 0.1
G H _
2.3 + 0.1
Storage Temperature Range Tstg -55 150 L J _
0.5+ 0.1
F F
K _
1.8 + 0.2
Thermal Characteristics L _
0.5 + 0.1
M _
1.0 + 0.1
Thermal Resistance, Junction-to-Case RthJC 2.1 /W 1 2 3 N 0.96 MAX
1. GATE
Thermal Resistance, Junction-to- 2. DRAIN P _
1.02 + 0.3
RthJA 110 /W 3. SOURCE
Ambient
PIN CONNECTION
IPAK(1)
D
G
S
2011. 1. 26 Revision No : 0 1/6
KF5N60D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.61 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.75A - 1.7 2.0
Dynamic
Total Gate Charge Qg - 11 -
VDS=480V, ID=4.5A
Gate-Source Charge Qgs - 2.8 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 45 -
Turn-on Delay time td(on) - 15 -
VDD=300V
Turn-on Rise time tr - 16 -
ID=4.5A ns
Turn-off Delay time td(off) - 30 -
RG=25 (Note4,5)
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 520 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 60 - pF
Reverse Transfer Capacitance Crss - 5.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 4.5
VGS
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