Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC kf5n65d-i
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download kf5n65d-i documenatation <<
Text preview - extract from the document
SEMICONDUCTOR KF5N65D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF5N65D
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
A K DIM MILLIMETERS
charge and excellent avalanche characteristics. It is mainly suitable for C D L
A _
6.60 + 0.20
electronic ballast and switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
E _
2.70 + 0.15
FEATURES B
F _
2.30 + 0.10
G 0.96 MAX
VDSS= 650V, ID= 4.4A
H 0.90 MAX
H
Drain-Source ON Resistance : RDS(ON)=1.75 (Max) @VGS = 10V J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Qg(typ) = 14.5nC L _
0.50 + 0.10
F F M M _
0.50 + 0.10
N 0.70 MIN
O 0.1 MAX
1 2 3
MAXIMUM RATING (Tc=25 )
O
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS 30 V
DPAK (1)
@TC=25 4.4
ID
Drain Current @TC=100 2.7 A
KF5N65I
Pulsed (Note1) IDP 15 A H
Single Pulsed Avalanche Energy C J
EAS 150 mJ
D
(Note 2)
Repetitive Avalanche Energy EAR 3.8 mJ
(Note 1)
B
DIM MILLIMETERS
A _
6.6 + 0.2
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns B _
6.1 + 0.2
(Note 3) M
K
C _
5.34 + 0.3
P
Tc=25 69.4 W D _
0.7 + 0.2
Drain Power N
PD E _
9.3 +0.3
Dissipation
E
Derate above 25 0.56 W/ F _
2.3 + 0.2
G _
0.76 + 0.1
Maximum Junction Temperature Tj 150 G H _
2.3 + 0.1
L J _
0.5+ 0.1
Storage Temperature Range Tstg F F
-55 150 K _
1.8 + 0.2
L _
0.5 + 0.1
Thermal Characteristics
M _
1.0 + 0.1
Thermal Resistance, Junction-to-Case RthJC 1.8 1 2 3 N 0.96 MAX
/W
P _
1.02 + 0.3
Thermal Resistance, Junction-to-
RthJA 110 /W
Ambient
PIN CONNECTION
IPAK(1)
D
G
S
2011. 10. 27 Revision No : 0 1/6
KF5N65D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 650 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.7 - V/
Drain Cut-off Current IDSS VDS=650V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.2A - 1.5 1.75
Dynamic
Total Gate Charge Qg - 14.5 -
VDS=520V, ID=5A
Gate-Source Charge Qgs - 3.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.8 -
Turn-on Delay time td(on) - 35 -
VDD=325V
Turn-on Rise time tr - 35 -
ID=5A ns
Turn-off Delay time td(off) - 65 -
RG=25 (Note4,5)
Turn-off Fall time tf - 25 -
Input Capacitance Ciss - 720 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 72 - pF
Reverse Transfer Capacitance Crss - 7.2 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5.5
VGS
◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo