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SEMICONDUCTOR KF5N65P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF5N65P
This planar stripe MOSFET has better characteristics, such as fast A
O
C
switching time, fast reverse recovery time, low on resistance, low gate
F
charge and excellent avalanche characteristics. It is mainly suitable for E
DIM MILLIMETERS
_
G A 9.9 + 0.2
electronic ballast and switching mode power supplies. B B 15.95 MAX
C 1.3+0.1/-0.05
Q _
D 0.8 + 0.1
I E _
3.6 + 0.2
FEATURES F _
2.8 + 0.1
K
VDSS= 650V, ID= 5A P G 3.7
M H 0.5+0.1/-0.05
Drain-Source ON Resistance : RDS(ON)=1.75 (Max) @VGS = 10V L
I 1.5
J J _
13.08 + 0.3
Qg(typ) = 14.5nC D K 1.46
N N H L _
1.4 + 0.1
M _
1.27+ 0.1
N _
2.54 + 0.2
O _
4.5 + 0.2
P _
2.4 + 0.2
1. GATE Q _
9.2 + 0.2
2. DRAIN
MAXIMUM RATING (Tc=25 ) 3. SOURCE
RATING
CHARACTERISTIC SYMBOL UNIT
KF5N65P KF5N65F
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS 30 V TO-220AB
@TC=25 5 5*
ID
Drain Current @TC=100 3.0 3.0* A
KF5N65F
Pulsed (Note1) IDP 15 A C
Single Pulsed Avalanche Energy EAS 150 mJ F
(Note 2)
O
Repetitive Avalanche Energy EAR 3.8 mJ E DIM MILLIMETERS
(Note 1)
B
A _
10.16 + 0.2
G
Peak Diode Recovery dv/dt B _
15.87 + 0.2
dv/dt 4.5 V/ns _
(Note 3) C 2.54 + 0.2
D _
0.8 + 0.1
Drain Power Tc=25 100 41.7 W E _
3.18 + 0.1
PD
K
F _
3.3 + 0.1
Dissipation Derate above 25 0.8 0.33 W/ G _
12.57 + 0.2
L M
R H _
0.5 + 0.1
Maximum Junction Temperature Tj 150
J
J _
13.0 + 0.5
Storage Temperature Range Tstg K _
3.23 + 0.1
-55 150 D
L 1.47 MAX
Thermal Characteristics N N H
M 1.47 MAX
N _
2.54 + 0.2
Thermal Resistance, Junction-to-Case RthJC 1.25 3.0 /W O _
6.68 + 0.2
Q _
4.7 + 0.2
Thermal Resistance, Junction-to- 1. GATE R _
RthJA 62.5 62.5 /W 1 2 3
2.76 + 0.2
Q
Ambient 2. DRAIN
3. SOURCE
PIN CONNECTION
TO-220IS (1)
D
G
S
2011. 8. 24 Revision No : 0 1/7
KF5N65P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 650 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.7 - V/
Drain Cut-off Current IDSS VDS=650V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.5A - 1.5 1.75
Dynamic
Total Gate Charge Qg - 14.5 -
VDS=520V, ID=5.0A
Gate-Source Charge Qgs - 3.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.8 -
Turn-on Delay time td(on) - 35 -
VDD=325V
Turn-on Rise time tr - 35 -
ID=5.0A ns
Turn-off Delay time td(off) - 65 -
RG=25 (Note4,5)
Turn-off Fall time tf - 25 -
Input Capacitance Ciss - 720 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 72 - pF
Reverse Transfer Capacitance Crss - 7.2 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS
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