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SEMICONDUCTOR KF6N60D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF6N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS
D L
C A _
6.60 + 0.20
avalanche characteristics. It is mainly suitable for electronic ballast and B _
6.10 + 0.20
C _
5.34 + 0.30
switching mode power supplies. D _
0.70 + 0.20
B E _
2.70 + 0.15
F _
2.30 + 0.10
G 0.96 MAX
FEATURES H
H 0.90 MAX
J J _
1.80 + 0.20
E
VDSS(Min.)= 600V, ID= 5A G N K _
2.30 + 0.10
L _
0.50 + 0.10
RDS(ON)=1.4 (Max) @VGS =10V F F M M _
0.50 + 0.10
N 0.70 MIN
Qg(typ.) =16nC O 0.1 MAX
1 2 3 1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Tc=25 ) O
RATING
CHARACTERISTIC SYMBOL UNIT
KF6N60D/I
Drain-Source Voltage VDSS 600 V DPAK (1)
Gate-Source Voltage VGSS 30 V
KF6N60I
@TC=25 5
A
ID H
C J
Drain Current @TC=100 3.15 A
D
Pulsed (Note1) IDP 15*
B
DIM MILLIMETERS
Single Pulsed Avalanche Energy _
6.6 + 0.2
EAS 180 mJ A
(Note 2) M B _
6.1 + 0.2
K C _
5.34 + 0.3
Repetitive Avalanche Energy P
EAR 4 mJ N D _
0.7 + 0.2
(Note 1) E _
9.3 +0.3
E
F _
2.3 + 0.2
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns G _
0.76 + 0.1
(Note 3) G H _
2.3 + 0.1
L J _
0.5 + 0.1
Drain Power Tc=25 69.4 W F F
_
K 1.8 + 0.2
PD _
Dissipation Derate above25 0.56 W/
L 0.5 + 0.1
M _
1.0 + 0.1
1 2 3 N 0.96 MAX
Maximum Junction Temperature Tj 150 P _
1.02 + 0.3
1. GATE
2. DRAIN
Storage Temperature Range Tstg -55 150 3. SOURCE
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 1.8 /W
IPAK(1)
Thermal Resistance, Junction-to-
RthJA 110 /W
Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
S
2011. 7. 25 Revision No : 0 1/6
KF6N60D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.6 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.5A - 1.2 1.4
Dynamic
Total Gate Charge Qg - 16 -
VDS=480V, ID=6A
Gate-Source Charge Qgs - 3.1 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 6.0 -
Turn-on Delay time td(on) - 20 -
VDD=300V, ID=6A
Turn-on Rise time tr - 20 -
RG=25 (Note4,5) ns
Turn-off Delay time td(off) - 50 -
VGS=10V
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 710 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 80 - pF
Reverse Transfer Capacitance Crss - 8.0 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 6
VGS
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