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SEMICONDUCTOR KF70N06P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF70N06P
It's mainly suitable for low viltage applications such as automotive, A
O
C
DC/DC converters and a load switch in battery powered applications
F
E G DIM MILLIMETERS
A _
9.9 + 0.2
B
B 15.95 MAX
FEATURES Q C 1.3+0.1/-0.05
VDSS= 60V, ID= 70A (KF70N06P) I D _
0.8 + 0.1
E _
3.6 + 0.2
Drain-Source ON Resistance : K _
P F 2.8 + 0.1
RDS(ON)=12m (Max.) @VGS = 10V M G 3.7
L
H 0.5+0.1/-0.05
J I 1.5
D J _
13.08 + 0.3
N N H K 1.46
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) _
L 1.4 + 0.1
M _
1.27 + 0.1
RATING
CHARACTERISTIC SYMBOL UNIT N _
2.54 + 0.2
KF70N06P KF70N06F O _
4.5 + 0.2
1 2 3 P _
2.4 + 0.2
1. GATE
Drain-Source Voltage VDSS 60 V 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Gate-Source Voltage VGSS 20 V
@TC=25 70 41
I D* TO-220AB
Drain Current @TC=100 44 25 A
Pulsed (Note1) IDP 240 196
KF70N06F
Single Pulsed Avalanche Energy EAS 480 mJ C
(Note 2) A
Repetitive Avalanche Energy EAR 12 mJ F
(Note 1)
O
Peak Diode Recovery dv/dt E DIM MILLIMETERS
dv/dt 4.5 V/ns
B
(Note 3) A _
10.16 + 0.2
G
B _
15.87 + 0.2
Drain Power Tc=25 125 43 W C _
2.54 + 0.2
PD _
Dissipation Derate above 25 1.0 0.34 W/ D 0.8 + 0.1
E _
3.18 + 0.1
K
Maximum Junction Temperature Tj 150 F _
3.3 + 0.1
G _
12.57 + 0.2
L M
Storage Temperature Range Tstg -55~150 R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Thermal Characteristics K _
3.23 + 0.1
D
L 1.47 MAX
Thermal Resistance, Junction-to-Case RthJC 1.0 2.9 /W M 1.47 MAX
N N H
N _
2.54 + 0.2
Thermal Resistance,
RthJA 62.5 /W O _
6.68 + 0.2
Junction-to-Ambient Q _
4.7 + 0.2
1. GATE
R _
2.76 + 0.2
* : Drain current limited by maximum junction temperature. 1 2 3 2. DRAIN
Q
3. SOURCE
PIN CONNECTION
D
TO-220IS (1)
G
S
2010. 7. 14 Revision No : 1 1/7
KF70N06P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 60 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.08 - V/
Drain Cut-off Current IDSS VDS=60V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=35A - 10.0 12.0 m
Dynamic
Total Gate Charge Qg - 51 -
VDS=48V, ID=70A
Gate-Source Charge Qgs - 11.3 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 21.7 -
Turn-on Delay time td(on) - 38 -
VDD=30V
Turn-on Rise time tr - 110 -
RL=0.43 ns
Turn-off Delay time td(off) - 90 -
RG=25 (Note4,5)
Turn-off Fall time tf - 72 -
Input Capacitance Ciss - 2140 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 546 - pF
Reverse Transfer Capacitance Crss - 96.8 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 70
VGS
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