Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC kf80n08p_f
<< Back |
HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download
Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing.
If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download kf80n08p_f documenatation <<Text preview - extract from the document SEMICONDUCTOR KF80N08P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF80N08P
It s mainly suitable for low voltage applications such as automotive, A
O
C
DC/DC converters and a load switch in battery powered applications
F
E G DIM MILLIMETERS
A _
9.9 + 0.2
B
B 15.95 MAX
Q C 1.3+0.1/-0.05
FEATURES I D _
0.8 + 0.1
E _
3.6 + 0.2
VDSS= 75V, ID= 80A K _
P F 2.8 + 0.1
Drain-Source ON Resistance : M G 3.7
L
H 0.5+0.1/-0.05
RDS(ON)=10m (Max.) @VGS = 10V J I 1.5
D J _
13.08 + 0.3
N N H K 1.46
L _
1.4 + 0.1
MAXIMUM RATING (Tc=25 ) M _
1.27 + 0.1
N _
2.54 + 0.2
RATING O _
4.5 + 0.2
CHARACTERISTIC SYMBOL UNIT 1 2 3 P _
2.4 + 0.2
1. GATE
KF80N08P KF80N08F 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Drain-Source Voltage VDSS 75 V
Gate-Source Voltage VGSS 20 V
TO-220AB
@TC=25 80 56
ID
Drain Current @TC=100 76 39 A
KF80N08F
Pulsed (Note1) IDP 320 224
A C
Single Pulsed Avalanche Energy EAS 1200 mJ
(Note 2) F
O
Repetitive Avalanche Energy EAR 18 mJ
(Note 1) E DIM MILLIMETERS
B
A _
10.16 + 0.2
Peak Diode Recovery dv/dt
G
dv/dt 4.5 V/ns B _
15.87 + 0.2
(Note 3) C _
2.54 + 0.2
Tc=25 230 62.5 W D _
0.8 + 0.1
Drain Power
PD E _
3.18 + 0.1
Dissipation
K
Derate above 25 1.54 0.42 W/ F _
3.3 + 0.1
G _
12.57 + 0.2
Tj L
Maximum Junction Temperature 175 M
R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Storage Temperature Range Tstg -55 175 K _
3.23 + 0.1
D
L 1.47 MAX
Thermal Characteristics
M 1.47 MAX
N N H
RthJC N _
2.54 + 0.2
Thermal Resistance, Junction-to-Case 0.65 2.4 /W
O _
6.68 + 0.2
Thermal Resistance, Q _
4.7 + 0.2
RthJA 62.5 62.5 /W 1. GATE
R _
2.76 + 0.2
Junction-to-Ambient 1 2 3 2. DRAIN
Q
3. SOURCE
* : Drain current limited by maximum junction temperature.
TO-220IS (1)
PIN CONNECTION
D
G
S
2008. 6. 19 Revision No : 0 1/7
KF80N08P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 75 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.11 - V/
Drain Cut-off Current IDSS VDS=75V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=40A - 8.5 10.0 m
Dynamic
Total Gate Charge Qg - 107 -
VDS=60V, ID=80A
Gate-Source Charge Qgs - 20 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 47 -
Turn-on Delay time td(on) - 63 -
VDD=37.5V
Turn-on Rise time tr - 228 -
ID=80A ns
Turn-off Delay time td(off) - 217 -
RG=25 (Note4,5)
Turn-off Fall time tf - 150 -
Input Capacitance Ciss - 3860 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 840 - pF
Reverse Transfer Capacitance Crss - 175 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 80
VGS
◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo