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SEMICONDUCTOR KF9N25D
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for DC/DC Converters C D L
A _
6.60 + 0.20
and switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
E _
2.70 + 0.15
FEATURES B
F _
2.30 + 0.10
G 0.96 MAX
VDSS= 250V, ID= 7.5A
H 0.90 MAX
H
Drain-Source ON Resistance : RDS(ON)=0.4 @VGS = 10V J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Qg(typ) = 14.5nC L _
0.50 + 0.10
F F M M _
0.50 + 0.10
N 0.70 MIN
O 0.1 MAX
MAXIMUM RATING (Ta=25 ) 1 2 3 1. GATE
2. DRAIN
CHARACTERISTIC SYMBOL RATING UNIT 3. SOURCE
O
Drain-Source Voltage VDSS 250 V
Gate-Source Voltage VGSS 30 V
@TC=25 7.5
ID DPAK (1)
Drain Current @TC=100 4.74 A
Pulsed (Note1) IDP 25
Single Pulsed Avalanche Energy EAS 126 mJ
(Note 2)
Repetitive Avalanche Energy EAR 4.0 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 54.3 W
PD
Dissipation Derate above 25 0.43 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.3 /W
Thermal Resistance, Junction-to-
RthJA 110 /W
Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
S
2011. 6. 21 Revision No : 0 1/6
KF9N25D
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 250 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.22 - V/
Drain Cut-off Current IDSS VDS=250V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.75A - 0.31 0.40
Dynamic
Total Gate Charge Qg - 14.5 -
VDS=200V, ID=9A
Gate-Source Charge Qgs - 3.2 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 6.3 -
Turn-on Delay time td(on) - 15 -
VDD=125V
Turn-on Rise time tr - 25 -
ID=9A ns
Turn-off Delay time td(off) - 30 -
RG=25 (Note4,5)
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 560 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 96 - pF
Reverse Transfer Capacitance Crss - 15 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 9
VGS
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