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SEMICONDUCTOR
TECHNICAL DATA
KGH15N120NDA
General Description
KEC NPT IGBTs offer lowest losses and highest energy efficiency for
application such as IH (induction heating), UPS, General inverter and other
soft switching applications.
FEATURES
High speed switching
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA using NPT technology
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES 20 V
@TC=25 24 A
Collector Current IC
@TC=100 15 A
Pulsed Collector Current ICM* 45 A
Diode Continuous Forward Current @TC=100 IF 15 A
Diode Maximum Forward Current IFM 45 A
@TC=25 200 W
Maximum Power Dissipation PD
@TC=100 80 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Junction to Case (IGBT) R JC 0.6 /W
Thermal Resistance, Junction to Case (DIODE) R JC 2.8 /W
2009. 2. 19 Revision No : 1 1/6
KGH15N120NDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=3mA 1200 - - V
Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 3 mA
Gate Leakage Current IGES VCE=0V, VGE= 20V - - 100 nA
Gate Threshold Voltage VGE(th) VGE=VCE, IC=15mA 3.5 5.5 7.5 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=15A - 2.2 2.7 V
Dynamic
Total Gate Charge Qg - 140 - nC
Gate-Emitter Charge Qge VCC=600V, VGE=15V, IC= 15A - 12 - nC
Gate-Collector Charge Qgc - 65 - nC
Turn-On Delay Time td(on) - 60 - ns
Rise Time tr - 50 - ns
Turn-Off Delay Time td(off) - 180 - ns
VCC=600V, IC=15A, VGE=15V,RG=10
Fall Time tf - 70 - ns
Inductive Load, TC = 25
Turn-On Switching Loss Eon - 3.0 - mJ
Turn-Off Switching Loss Eoff - 0.6 - mJ
Total Switching Loss Ets - 3.6 - mJ
Turn-On Delay Time td(on) - 60 - ns
Rise Time tr - 50 - ns
Turn-Off Delay Time td(off) - 190 - ns
VCC=600V, IC=25A, VGE=15V, RG=10
Fall Time tf - 100 - ns
Inductive Load, TC = 125
Turn-On Switching Loss Eon - 3.1 - mJ
Turn-Off Switching Loss Eoff - 0.8 - mJ
Total Switching Loss Ets - 3.9 - mJ
Input Capacitance Cies - 1400 - pF
Ouput Capacitance Coes VCE=30V, VGE=0V, f=1MHz - 140 - pF
Reverse Transfer Capacitance Cres - 57 - pF
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TC=25 - 1.5 1.9
Diode Forward Voltage VF IF = 15A V
TC=125 - 1.6 -
TC=25 - 200 300
Diode Reverse Recovery Time trr ns
IF = 15A TC=125 - 270 -
di/dt = 200A/ s TC=25 - 26 34
Diode Peak Reverse Recovery Current Irr A
TC=125 - 30 -
2009. 2. 19 Revision No : 1 2/6
KGH15N120NDA
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2009. 2. 19 Revision No : 1 6/6
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