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SEMICONDUCTOR
TECHNICAL DATA
KGT15N60FDA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness as well as short circuit ruggedness.
It is designed for hard switching applications.
FEATURES
High speed switching
High system efficiency
Short Circuit Withstand Times 5us(@TC=100 )
Extremely enhanced avalanche capability
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 600 V
Gate-Emitter Voltage VGES 20 V
@Tc=25 15 A
Collector Current IC
@Tc=100 7.5 A
Pulsed Collector Current ICM* 30 A
Diode Continuous Forward Current @Tc=25 IF 15 A
Diode Maximum Forward Current IFM* 45 A
@Tc=25 41.6 W
Maximum Power Dissipation PD
@Tc=100 17 W
Tj
*Repetitive rating : Pulse width limited by max. junction temperature
Maximum Junction Temperature 150
Storage Temperature Range Tstg -55 to + 150
E
THERMAL CHARACTERISTIC C
G
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Junction to Case (IGBT) Rt h JC 3.0 /W
Thermal Resistance, Junction to Case (DIODE) Rt h JCD 3.6 /W
Thermal Resistance, Junction to Ambient Rt h JA 62.5 /W
2012. 7. 13 Revision No : 1 1/8
KGT15N60FDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=250 600 - - V
Collector Cut-off Current ICES VGE=0V, VCE=600V - - 250
Gate Leakage Current IGES VCE=0V, VGE= 20V - - 100 nA
Gate Threshold Voltage VGE(th) VGE=VCE, IC=2mA 4.5 5.7 7.0 V
VGE=15V, IC=15A - 1.7 1.95 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=15A, TC=125 - 2.0 - V
VGE=15V, IC=30A, TC=25 - 2.3 - V
Dynamic
Total Gate Charge Qg - 70 - nC
Gate-Emitter Charge Qge VCC=300V, VGE=15V, IC= 15A - 10 - nC
Gate-Collector Charge Qgc - 35 - nC
Turn-On Delay Time td(on) - 30 - ns
Rise Time tr - 20 - ns
Turn-Off Delay Time td(off) - 90 - ns
VCC=300V, IC=15A, VGE=15V,RG=10
Fall Time tf - 35 - ns
Inductive Load, TC = 25
Turn-On Switching Loss Eon - 0.18 - mJ
Turn-Off Switching Loss *Note(1) Eoff - 0.25 - mJ
Total Switching Loss Ets - 0.43 - mJ
Turn-On Delay Time td(on) - 35 - ns
Rise Time tr - 25 - ns
Turn-Off Delay Time td(off) - 95 - ns
VCC=300V, IC=15A, VGE=15V, RG=10
Fall Time tf - 70 - ns
Inductive Load, TC = 125
Turn-On Switching Loss Eon - 0.28 - mJ
Turn-Off Switching Loss *Note(1) Eoff - 0.4 - mJ
Total Switching Loss Ets - 0.7 - mJ
Input Capacitance Cies - 1270 - pF
Ouput Capacitance Coes VCE=30V, VGE=0V, f=1MHz - 90 - pF
Reverse Transfer Capacitance Cres - 45 - pF
Short Circuit Withstand Time tsc VCC=300V, VGE=15V, TC=100 5 - - s
*Notes(1) Energy loss include tail current and diode reverse recovery.
Marking
2012. 7. 13 Revision No : 1 2/8
KGT15N60FDA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TC=25 - 1.6 2.3
Diode Forward Voltage VF IF = 15A V
TC=125 - 1.3 -
TC=25 - 45 80
Diode Reverse Recovery Time trr ns
TC=125 - 70 -
IF = 15A TC=25 - 12 25
Diode Peak Reverse Recovery Current Irr A
di/dt = 800A/ s TC=125 - 22 -
TC=25 - 300 1200
Diode Reverse Recovery Charge Qrr nC
TC=125 - 1000 -
2012. 7. 13 Revision No : 1 3/8
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2012. 7. 13 Revision No : 1 8/8
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