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SEMICONDUCTOR
TECHNICAL DATA
KGT25N120NDH
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
IH(induction heating), microwave oven, etc.
FEATURES
High speed switching
High system efficiency
Soft current turn-off waveforms
Extremely enhanced avalanche capability
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES 20 V
@Tc=25 50 A
Collector Current IC
@Tc=100 25 A
Pulsed Collector Current ICM* 90 A
Diode Continuous Forward Current @Tc=100 IF 25 A
Diode Maximum Forward Current IFM 150 A
@Tc=25 225 W
Maximum Power Dissipation PD
@Tc=100 90 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
E
THERMAL CHARACTERISTIC C
G
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.57 /W
Thermal Resistance, Junction to Case (DIODE) Rt h JC 2.8 /W
Thermal Resistance, Junction to Ambient Rt h JA 40 /W
2011. 8. 9 Revision No : 0 1/7
KGT25N120NDH
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=1mA 1200 - - V
Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 1.0 mA
Gate Leakage Current IGES VCE=0V, VGE= 20V - - 100 nA
Gate Threshold Voltage VGE(th) VGE=VCE, IC=25mA 4.5 6.0 7.5 V
VGE=15V, IC=25A - 1.85 2.25 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=25A, TC = 125 - 2.15 - V
VGE=15V, IC=50A - 2.40 - V
Dynamic
Total Gate Charge Qg - 150 - nC
Gate-Emitter Charge Qge VCC=600V, VGE=15V, IC= 25A - 20 - nC
Gate-Collector Charge Qgc - 70 - nC
Turn-On Delay Time td(on) - 40 - ns
Rise Time tr - 25 - ns
Turn-Off Delay Time td(off) - 200 - ns
VCC=600V, IC=25A, VGE=15V,RG=10
Fall Time tf - 150 - ns
Inductive Load, TC = 25
Turn-On Switching Loss Eon - 3.5 - mJ
Turn-Off Switching Loss Eoff - 1.2 - mJ
Total Switching Loss Ets - 4.7 - mJ
Turn-On Delay Time td(on) - 45 - ns
Rise Time tr - 30 - ns
Turn-Off Delay Time td(off) - 210 - ns
VCC=600V, IC=25A, VGE=15V, RG=10
Fall Time tf - 220 - ns
Inductive Load, TC = 125
Turn-On Switching Loss Eon - 4.0 - mJ
Turn-Off Switching Loss Eoff - 2.0 - mJ
Total Switching Loss Ets - 6.0 - mJ
Input Capacitance Cies - 2500 - pF
Ouput Capacitance Coes VCE=30V, VGE=0V, f=1MHz - 100 - pF
Reverse Transfer Capacitance Cres - 70 - pF
Marking
2011. 8. 9 Revision No : 0 2/7
KGT25N120NDH
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TC=25 - 1.8 2.5
Diode Forward Voltage VF IF = 25A V
TC=125 - 1.9 -
TC=25 - 230 330
Diode Reverse Recovery Time trr ns
TC=125 - 300 -
IF = 25A TC=25 - 27 35
Diode Peak Reverse Recovery Current Irr A
di/dt = 200A/ s TC=125 - 31 -
TC=25 - 3100 4700
Diode Reverse Recovery Charge Qrr nC
TC=125 - 4650 -
2011. 8. 9 Revision No : 0 3/7
KGT25N120NDH
2011. 8. 9 Revision No : 0 4/7
KGT25N120NDH
2011. 8. 9 Revision No : 0 5/7
KGT25N120NDH
2011. 8. 9 Revision No : 0 6/7
KGT25N120NDH
2011. 8. 9 Revision No : 0 7/7
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