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SEMICONDUCTOR
TECHNICAL DATA
KGT30N120NDA
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency A
Q B
N
and high avalanche ruggedness for soft switching application such as O K
DIM MILLIMETERS
general inverters, etc. _
F
A 15.60 + 0.20
B _
4.80 + 0.20
C _
19.90 + 0.20
C
J
FEATURES
R
D _
2.00 + 0.20
I
H
d _
1.00 + 0.20
High speed switching E _
3.00 + 0.20
F _
3.80 + 0.20
High system efficiency
G
G _
3.50 + 0.20
D _
Soft current turn-off waveforms H 13.90 + 0.20
E I _
12.76 + 0.20
Extremely enhanced avalanche capability J _
23.40 + 0.20
L
d M K 1.5+0.15-0.05
L _
16.50 + 0.30
M _
1.40 + 0.20
P P N _
13.60 + 0.20
T
O _
9.60 + 0.20
P _
5.45 + 0.30
Q _
3.20 + 0.10
1 2 3 _
R 18.70 + 0.20
T 0.60+0.15-0.05
1. GATE
2. COLLECTOR
3. EMITTER
TO-3P(N)-E
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
C
Gate-Emitter Voltage VGES 20 V
@Tc=25 50 A
Collector Current IC
@Tc=100 30 A
G
Pulsed Collector Current ICM* 90 A
Diode Continuous Forward Current @Tc=100 IF 30 A
Diode Maximum Forward Current IFM 150 A E
@Tc=25 310 W
Maximum Power Dissipation PD
@Tc=100 125 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
E
C
THERMAL CHARACTERISTIC G
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.4 /W
Thermal Resistance, Junction to Case (DIODE) Rt h JC 2.8 /W
Thermal Resistance, Junction to Ambient Rt h JA 40 /W
2011. 9. 6 Revision No : 0 1/8
KGT30N120NDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=1mA 1200 - - V
Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 1.0 mA
Gate Leakage Current IGES VCE=0V, VGE= 20V - - 100 nA
Gate Threshold Voltage VGE(th) VGE=VCE, IC=25mA 4.0 5.5 7.0 V
VGE=15V, IC=30A - 1.95 2.30 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=30A, TC = 125 - 2.25 - V
VGE=15V, IC=60A - 2.50 - V
Dynamic
Total Gate Charge Qg - 200 300 nC
Gate-Emitter Charge Qge VCC=600V, VGE=15V, IC= 30A - 20 - nC
Gate-Collector Charge Qgc - 80 - nC
Turn-On Delay Time td(on) - 60 - ns
Rise Time tr - 50 - ns
Turn-Off Delay Time td(off) - 280 - ns
VCC=600V, IC=30A, VGE=15V,RG=10
Fall Time tf - 90 - ns
Inductive Load, TC = 25
Turn-On Switching Loss Eon - 4.3 6.1 mJ
Turn-Off Switching Loss Eoff - 1.07 1.4 mJ
Total Switching Loss Ets - 5.37 7.5 mJ
Turn-On Delay Time td(on) - 55 - ns
Rise Time tr - 50 - ns
Turn-Off Delay Time td(off) - 290 - ns
VCC=600V, IC=30A, VGE=15V, RG=10
Fall Time tf - 130 - ns
Inductive Load, TC = 125
Turn-On Switching Loss Eon - 5.0 6.3 mJ
Turn-Off Switching Loss Eoff - 1.6 2.1 mJ
Total Switching Loss Ets - 6.6 8.4 mJ
Input Capacitance Cies - 3100 - pF
Ouput Capacitance Coes VCE=30V, VGE=0V, f=1MHz - 100 - pF
Reverse Transfer Capacitance Cres - 80 - pF
2011. 9. 6 Revision No : 0 2/8
KGT30N120NDA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TC=25 - 1.9 2.5
Diode Forward Voltage VF IF = 30A V
TC=125 - 2.05 -
TC=25 - 250 330
Diode Reverse Recovery Time trr ns
TC=125 - 320 -
IF = 30A TC=25 - 29 35
Diode Peak Reverse Recovery Current Irr A
di/dt = 200A/ s TC=125 - 33 -
TC=25 - 3200 4700
Diode Reverse Recovery Charge Qrr nC
TC=125 - 4750 -
2011. 9. 6 Revision No : 0 3/8
KGT30N120NDA
Typical Performance Characteristics
Fig 1. Saturation Voltage Characteristics Fig 2. Saturation Voltage Characteristics
180 100
15V 10V 8V Common Emitter
160 VGE = 15V
Collector Current IC (A)
Collector Current IC (A)
140 12V 80 TC = 25 C
TC = 125 C
120
60
100
80
40
60 6V
40 20
20 Common Emitter
TC=25 C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V)
Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE
3.0 20
Collector - Emitter Voltage VCE (V)
Collector - Emitter Voltage VCE (V)
Common Emitter
Common Emitter TC = 25 C
VGE = 15V 16
50A
2.5
12
IC = 30A 8
2.0
4 50A
30A
IC = 15A
1.5 0
25 50 75 100 125 0 4 8 12 16 20
Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V)
Fig 5. Saturation Voltage vs. VGE Fig 6. Capacitance Characteristics
20 5000
Collector - Emitter Voltage VCE (V)
Common Emitter Ciss
Common Emitter
TC = 125 C 4500
VGE = 0V, f = 1MHZ
16 4000 T = 25 C
C
3500
Capacitance (pF)
12 3000
Coss
2500
8 2000
1500
50A
4 1000
30A
500 Crss
IC = 15A
0 0
0 4 8 12 16 20 1 10 40
Gate - Emitter Voltage VGE (V) Collector - Emitter Voltage VCE (V)
2011. 9. 6 Revision No : 0 4/8
KGT30N120NDA
Typical Performance Characteristics (Continued)
Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance
td(off)
1000
100
Switching Time (ns)
Switching Time (ns)
td(on)
tf
tr 100
Common Emitter
Common Emitter
VCC = 600V, VGE = 15V
VCC = 600V, VGE = 15V
IC = 30A
IC = 30A
TC = 25 C
TC = 25 C
TC = 125 C
TC = 125 C
10 10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Gate Resistance RG () Gate Resistance RG ()
Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current
10 100
Eon td(on)
Switching Time (ns)
Switching Loss (mJ)
1 Eoff
tr
Common Emitter
VCC = 600V, VGE = 15V Common Emitter
IC = 30A VGE = 15V, RG = 10
TC = 25 C TC = 25 C
TC = 125 C TC = 125 C
0.1 10
0 10 20 30 40 50 60 70 0 20 30 40 50
Gate Resistance RG () Collector Current IC ()
Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current
1000 10.0
td(off)
Eon
Switching Loss (mJ)
Switching Time (ns)
100 1.0
tf
Common Emitter Eoff Common Emitter
VGE = 15V, RG = 10 VGE = 15V, RG = 10
TC = 25 C TC = 25 C
TC = 125 C TC = 125 C
10 0.1
0 10 20 30 40 50 0 10 20 30 40 50
Collector Current IC () Collector Current IC ()
2011. 9. 6 Revision No : 0 5/8
KGT30N120NDA
Typical Performance Characteristics (Continued)
Fig 13. Gate Charge Characteristics Fig 14. SOA Characteristics
16 100.00
Common Emitter
Gate-Emitter Voitage VGE (V)
14 RL = 20
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