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SEMICONDUCTOR
TECHNICAL DATA
KGT40N60KDA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency O
A
S
B
K
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters. DIM MILLIMETERS
C
A _
15.90 + 0.30
J
B _
5.00 + 0.20
FEATURES C _
20.85 + 0.30
D _
3.00 + 0.20
High speed switching E _
2.00 + 0.20
G
F _
1.20 + 0.20
High system efficiency D M G Max. 4.50
Short Circuit Withstand Times 10us H _
20.10 + 0.70
H
E _
I 0.60 + 0.02
Extremely enhanced avalanche capability I J _
14.70 + 0.20
F _
K 2.00 + 0.10
M _
2.40 + 0.20
O _
3.60 + 0.30
P P P _
5.45 + 0.30
Q _
3.60 + 0.20
R _
7.19 + 0.10
1 2 3
1. GATE S
2. COLLECTOR
3. EMITTER
TO-247
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 600 V C
Gate-Emitter Voltage VGES 20 V
@Tc=25 80 A
Collector Current IC
@Tc=100 40 A
G
Pulsed Collector Current ICM* 120 A
Diode Continuous Forward Current @Tc=100 IF 40 A
E
Diode Maximum Forward Current IFM 80 A
@Tc=25 290 W
Maximum Power Dissipation PD
@Tc=100 116 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
E
C
G
THERMAL CHARACTERISTIC
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.43 /W
Thermal Resistance, Junction to Case (DIODE) Rt h JC 1.45 /W
Thermal Resistance, Junction to Ambient Rt h JA 40 /W
2011. 8. 30 Revision No : 0 1/7
KGT40N60KDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=250 600 - - V
Collector Cut-off Current ICES VGE=0V, VCE=600V - - 250
Gate Leakage Current IGES VCE=0V, VGE= 20V - - 100 nA
Gate Threshold Voltage VGE(th) VGE=VCE, IC=250 4.5 5.5 7.0 V
VGE=15V, IC=40A - 1.80 2.20 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=40A, TC = 125 - 2.10 - V
VGE=15V, IC=80A, TC = 25 - 2.45 - V
Dynamic
Total Gate Charge Qg - 170 - nC
Gate-Emitter Charge Qge VCC=400V, VGE=15V, IC= 40A - 25 - nC
Gate-Collector Charge Qgc - 80 - nC
Turn-On Delay Time td(on) - 50 - ns
Rise Time tr - 40 - ns
Turn-Off Delay Time td(off) - 170 - ns
VCC=300V, IC=40A, VGE=15V,RG=10
Fall Time tf - 35 - ns
Inductive Load, TC = 25
Turn-On Switching Loss Eon - 0.6 - mJ
Turn-Off Switching Loss Eoff - 0.4 - mJ
Total Switching Loss Ets - 1.0 - mJ
Turn-On Delay Time td(on) - 55 - ns
Rise Time tr - 50 - ns
Turn-Off Delay Time td(off) - 185 - ns
VCC=300V, IC=40A, VGE=15V, RG=10
Fall Time tf - 75 - ns
Inductive Load, TC = 125
Turn-On Switching Loss Eon - 1.2 - mJ
Turn-Off Switching Loss Eoff - 1.0 - mJ
Total Switching Loss Ets - 2.2 - mJ
Input Capacitance Cies - 3200 - pF
Ouput Capacitance Coes VCE=30V, VGE=0V, f=1MHz - 200 - pF
Reverse Transfer Capacitance Cres - 100 - pF
Short Circuit Withstand Time tsc VCC=300V, VGE=15V, TC=100 10 - - s
Note 1 : Energy loss include tail current and diode reverse recovery.
Marking
KGT
40N60KDA
025
1 Device Mark 1
2 Device Mark 2
3 Lot No
2011. 8. 30 Revision No : 0 2/7
KGT40N60KDA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TC=25 - 1.8 2.3
Diode Forward Voltage VF IF = 40A V
TC=125 - 1.5 -
TC=25 - 90 -
Diode Reverse Recovery Time trr ns
TC=125 - 105 -
IF = 40A TC=25 - 16 -
Diode Peak Reverse Recovery Current Irr A
di/dt = -600A/ s TC=125 - 29 -
TC=25 - 730 -
Diode Reverse Recovery Charge Qrr nC
TC=125 - 1550 -
2011. 8. 30 Revision No : 0 3/7
KGT40N60KDA
Fig 1. Saturation Voltage Characteristics Fig 2. Saturation Voltage Characteristics
200 100
20V Common Emitter
180 15V 90 VGE = 15V
Collector Current IC (A)
Collector Current IC (A)
160 80 TC = 25 C
TC = 125 C
140 12V 70
120 60
100 50
80 40
10V
60 30
40 20
20 Common Emitter 10
TC=25 C
0 0
0 2 4 6 8 10 0 1 2 3 4
Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V)
Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE
3.5 20
Collector - Emitter Voltage VCE (V)
Collector - Emitter Voltage VCE (V)
Common Emitter Common Emitter
VGE = 15V IC = 80A TC = 25 C
16
3.0
12
2.5
IC = 40A 8
40A
2.0 60A
4
IC = 20A
1.5 0
0 50 100 150 0 4 8 12 16 20
Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V)
Fig 5. Saturation Voltage vs. VGE Fig 6. Capacitance Characteristics
20 5000
Collector - Emitter Voltage VCE (V)
Common Emitter Common Emitter
TC = 125 C 4500 VGE = 0V, f = 1MHZ
Ciss TC = 25 C
16 4000
3500
Capacitance (pF)
12 3000
2500
8 40A 2000
1500 Coss
IC = 20A 60A
4 1000 Crss
500
0 0
0 4 8 12 16 20 1 10 100
Gate - Emitter Voltage VGE (V) Collector - Emitter Voltage VCE (V)
2011. 8. 30 Revision No : 0 4/7
KGT40N60KDA
Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance
1000 1000
Switching Time (ns)
Switching Time (ns)
tr td(off)
100 100
td(on)
Common Emitter
tf Common Emitter
VCC = 300V, VGE = 15V
VCC = 300V, VGE = 15V
IC = 40A
IC = 40A
TC = 25 C TC = 25 C
TC = 125 C TC = 125 C
10 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Gate Resistance RG () Gate Resistance RG ()
Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current
10 100
Switching Time (ns)
Switching Loss (mJ)
E(on)
td(on)
1
E(off)
Common Emitter
VCC = 300V, VGE = 15V tr Common Emitter
IC = 40A VGE = 15V, RG = 10
TC = 25 C TC = 25 C
TC = 125 C TC = 125 C
0.1 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Gate Resistance RG () Collector Current IC ()
Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current
1000 Common Emitter 10
VGE = 15V, RG = 10
TC = 25 C
TC = 125 C
Switching Loss (mJ)
Switching Time (ns)
td(off) E(on)
100 1
tf
Common Emitter
VGE = 15V, RG = 10
E(off)
TC = 25 C
TC = 125 C
10 0.1
5 10 20 30 40 50 60 0 10 20 30 40 50 60
Collector Current IC () Collector Current IC ()
2011. 8. 30 Revision No : 0 5/7
KGT40N60KDA
Fig 13. Gate Charge Characteristics Fig 14. SOA Characteristics
20 1000
18 Common Emitter
Gate-Emitter Voitage VGE (V)
IC = 40
16 TC = 25 C 100
Collector Current IC (A)
600V
14 Vcc = 200V
12 400V 10 50◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo