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SEMICONDUCTOR KHB019N20P1/F1/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB019N20P1
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for DC/DC converters B
A _
9.9 + 0.2
B 15.95 MAX
and switching mode power supplies. Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
K P F _
2.8 + 0.1
M G 3.7
L
H 0.5+0.1/-0.05
FEATURES J I 1.5
D J _
13.08 + 0.3
VDSS=200V, ID=19A N N H K 1.46
_
1.4 + 0.1
Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V M
L
_
1.27 + 0.1
Qg(typ.)=35nC N _
2.54 + 0.2
_ 0.2
O 4.5 +
1 2 3 P _
2.4 + 0.2
1. GATE
2. DRAIN Q _
9.2 + 0.2
3. SOURCE
MAXIMUM RATING (Tc=25 )
TO-220AB
RATING
CHARACTERISTIC SYMBOL KHB019N20F1 UNIT
KHB019N20P1 KHB019N20F1
KHB019N20F2 A C
Drain-Source Voltage VDSS 200 V
F
O
Gate-Source Voltage VGSS 30 V E DIM MILLIMETERS
B
A _
10.16 + 0.2
G
@TC=25 19 19* B _
15.87 + 0.2
ID C _
2.54 + 0.2
Drain Current @TC=100 12.1 12.1* A D _
0.8 + 0.1
E _
3.18 + 0.1
K
_
Pulsed (Note1) IDP 76 76* F 3.3 + 0.1
_ 0.2
G 12.57 +
L M _
Single Pulsed Avalanche Energy EAS
R H 0.5 + 0.1
250 mJ J J 13.0 MAX
(Note 2) K _
3.23 + 0.1
D
1.47 MAX
Repetitive Avalanche Energy EAR
L
14 mJ M 1.47 MAX
(Note 1) N N H
N _
2.54 + 0.2
O _
6.68 + 0.2
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns Q _
4.7 + 0.2
(Note 3) R _
2.76 + 0.2
Q
1 2 3
Drain Power Tc=25 140 50 W 1. GATE
PD 2. DRAIN
3. SOURCE
Dissipation Derate above 25 1.12 0.4 W/
Maximum Junction Temperature Tj 150 TO-220IS (1)
Storage Temperature Range Tstg -55 150
KHB019N20F2
Thermal Characteristics
A C
Thermal Resistance, Junction-to-Case RthJC 0.89 2.5 /W
F
S
RthCS
P
Thermal Resistance, Case-to-Sink 0.5 - /W E DIM MILLIMETERS
A _
10.0 + 0.3
B
Thermal Resistance, Junction-to- _
RthJA B
G
15.0 + 0.3
62.5 62.5 /W
Ambient C _
2.70 + 0.3
D 0.76+0.09/-0.05
* : Drain current limited by maximum junction temperature. E 3.2 +0.2
_
L L F _
3.0 + 0.3
K
R
G _
12.0 + 0.3
PIN CONNECTION M H 0.5+0.1/-0.05
J
D D J _
13.6 + 0.5
D K _
3.7 + 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N N H N _
2.54 +0.1
P _
6.8 + 0.1
Q _
4.5 + 0.2
R _
2.6 + 0.2
0.5 Typ
Q
1 2 3 S
G 1. GATE
2. DRAIN
3. SOURCE
S TO-220IS
2010. 10. 27 Revision No :1 1/7
KHB019N20P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 200 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.18 - V/
Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=9.5A - 0.14 0.18
Dynamic
Total Gate Charge Qg - 35 44
VDS=160V, ID=19A
Gate-Source Charge Qgs - 4.8 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 18 -
Turn-on Delay time td(on) - 12 30
VDD=100V
Turn-on Rise time tr - 33 70
RL=5 ns
Turn-off Delay time td(off) - 130 270
RG=25 (Note4,5)
Turn-off Fall time tf - 75 160
Input Capacitance Ciss - 900 1170
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz - 213 277 pF
Output Capacitance Coss - 80 104
Source-Drain Diode Ratings
Continuous Source Current IS - - 19
VGS
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