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SEMICONDUCTOR KHB1D0N60G
TECHNICAL DATA N-Ch Planer MOSFET
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
supplies and low power battery chargers.
FEATURES
VDSS= 600V, ID= 0.4A
Drain-Source ON Resistance :
RDS(ON)=6.5 (Typ.), @VGS = 10V
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
DC ID 0.4 A
Drain Current
Pulsed (Note1) IDP 1.6 A
Single Pulsed Avalanche Energy (Note 2) EAS 25 mJ
Drain-Source Diode Forward Current IS 0.4 A
Drain Power Dissipation (TC=25 ) PD 3 W
Maximum Junction Temperature Tj -55~150
Storage Temperature Range Tstg -55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient RthJA 120 /W
Note 1) Pulse Test : Pulse width 10 , Duty cycle 1%
Note 2) Starting Tj=25 , ID=1A, VDD=50V
Equivalent Circuit
2008. 5. 8 Revision No : 2 1/6
KHB1D0N60G
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 100 A
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=0.5A - 6.5 8
Forward Transconductance gFS VDS=15V, ID=0.5A - 1 - S
Dynamic
Input Capacitance Ciss - 156 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1MHz - 23.5 - pF
Reverse Transfer Capacitance Crss - 3.8 -
Total Gate Charge Qg - 7 9
Gate-Source Charge Qgs VDS=480V, ID=1A, VGS=10V - 1.1 - nC
Gate-Drain Charge Qgd - 3.7 -
Turn-on Delay time td(on) - 6.5 -
Turn-on Rise time tr - 10 -
VDD=300V, ID=1A, RG=25 ns
Turn-off Delay time td(off) - 22 -
Turn-off Fall time tf - 40 -
ELECTRICAL CHARACTERISTICS (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Diode Forward Voltage VDS ISD=1A, VGS=0V - - 1.4 V
Reverse Recovery Time Trr VGS=0V, IS=1A, dIF/dt=100A/ s - 140 - ns
Upper electrical characteristics can be changed because these are tentative specifications.
Graphs are omitted because these are tentative specifications.
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