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SEMICONDUCTOR KHB1D0N60D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB1D0N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 1.0A
Drain-Source ON Resistance :
RDS(ON)=12 (Max), @VGS = 10V
Qg(typ.) = 4.5nC
MAXIMUM RATING (Ta=25 )
RATING
CHARACTERISTIC SYMBOL UNIT
KHB1D0N60D KHB1D0N60I
KHB1D0N60I
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
@TC=25 1.0 1.0*
ID
Drain Current @TC=100 0.60 0.60* A
Pulsed (Note1) IDP 3.0 3.0*
Single Pulsed Avalanche Energy EAS 63 mJ
(Note 2)
Repetitive Avalanche Energy EAR 2.8 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 5.5 V/ns
(Note 3)
Drain Power Ta=25 28 28 W
PD
Dissipation Derate above 25 0.22 0.22 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 4.53 4.53 /W
Thermal Resistance, Case-to-Sink RthCS 50 50 /W
Thermal Resistance, Junction-to-
RthJA 110 110 /W
Ambient
* : Drain current limited by maximum junction temperature.
2007. 3. 26 Revision No : 3 1/6
KHB1D0N60D/I
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.65 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=0.5A - 9.5 12
Dynamic
Total Gate Charge Qg - 5.9 7.7
VDS=480V, ID=1.0A
Gate-Source Charge Qgs - 1.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2.7 -
Turn-on Delay time td(on) - 10 30
VDD=300V
Turn-on Rise time tr - 20 50
ID=1.0A ns
Turn-off Delay time td(off) - 16 45
RG=25 (Note4,5)
Turn-off Fall time tf - 25 60
Input Capacitance Ciss - 155 200
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 20 26 pF
Reverse Transfer Capacitance Crss - 3.0 4.0
Source-Drain Diode Ratings
Continuous Source Current IS - - 1.0
VGS
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