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SEMICONDUCTOR KHB1D0N70G
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast B C
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
A
supplies and low power battery chargers.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
FEATURES D C 3.70 MAX
J
D 0.45
VDSS= 700V, ID= 0.4A E 1.00
F 1.27
Drain-Source ON Resistance : G 0.85
RDS(ON)=9.0 (Typ.), @VGS = 10V H 0.45
H J _
14.00 + 0.50
F F K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
C
1 2 3
L
M
1. GATE
* Bottom 2. DRAIN
3. SOURCE
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL RATING UNIT
TO-92
Drain-Source Voltage VDSS 700 V
Gate-Source Voltage VGSS 30 V
DC ID 0.4 A
Drain Current
Pulsed (Note1) IDP 1.6 A
Single Pulsed Avalanche Energy (Note 2) EAS 25 mJ
Drain-Source Diode Forward Current IS 0.4 A
Drain Power Dissipation (TC=25 ) PD 3 W
Maximum Junction Temperature Tj -55~150
Storage Temperature Range Tstg -55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient RthJA 120 /W
Note 1) Pulse Test : Pulse width 10 , Duty cycle 1%
Note 2) Starting Tj=25 , ID=1A, VDD=50V
Equivalent Circuit
D
G
S
2008. 5. 8 Revision No : 2 1/6
KHB1D0N70G
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 700 - - V
Drain Cut-off Current IDSS VDS=700V, VGS=0V - - 100 A
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=0.5A - 9 10.5
Forward Transconductance gFS VDS=15V, ID=0.5A - 1 - S
Dynamic
Input Capacitance Ciss - 156 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1MHz - 23.5 - pF
Reverse Transfer Capacitance Crss - 3.8 -
Total Gate Charge Qg - 7 9
Gate-Source Charge Qgs VDS=560V, ID=1A, VGS=10V - 1.1 - nC
Gate-Drain Charge Qgd - 3.7 -
Turn-on Delay time td(on) - 6.5 -
Turn-on Rise time tr - 10 -
VDD=350V, ID=1A, RG=25 ns
Turn-off Delay time td(off) - 22 -
Turn-off Fall time tf - 40 -
ELECTRICAL CHARACTERISTICS (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Diode Forward Voltage VDS ISD=1A, VGS=0V - - 1.4 V
Reverse Recovery Time Trr VGS=0V, IS=1A, dIF/dt=100A/ s - 140 - ns
Upper electrical characteristics can be changed because these are tentative specifications.
Graphs are omitted because these are tentative specifications.
2008. 5. 8 Revision No : 2 2/6
KHB1D0N70G
Fig1. ID - VDS Fig2. ID - VGS
VGS VDS = 25V
TOP : 10.0 V
6.0 V
5.0 V
Drain Current ID (A)
Drain Current ID (A)
Bottom : 4.5 V 0
0 10
10
150 C
-1
25 C -55 C
-1 10
10
-2 -2
10 10
-1 0 1
10 10 10 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 20
On - Resistance RDS(ON) ()
VGS = 0V VGS = 5V VGS = 10V
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