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SEMICONDUCTOR KHB4D0N65P/F/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB4D0N65P
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for switch mode power B
A _
9.9 + 0.2
B 15.95 MAX
supplies. Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
K P F _
2.8 + 0.1
M G 3.7
L
0.5+0.1/-0.05
FEATURES J
H
I 1.5
D J _
13.08 + 0.3
VDSS=650V, ID=4A H K 1.46
N N
_
Drain-Source ON Resistance L 1.4 + 0.1
_
M 1.27 + 0.1
: RDS(ON)=3.0 @VGS = 10V N _
2.54 + 0.2
O _
4.5 + 0.2
Qg(typ.)=20nC 1 2 3 1. GATE P _
2.4 + 0.2
2. DRAIN Q _
9.2 + 0.2
3. SOURCE
MAXIMUM RATING (Tc=25 ) TO-220AB
RATING
KHB4D0N65F
CHARACTERISTIC SYMBOL KHB4D0N65F UNIT A C
KHB4D0N65P
KHB4D0N65F2
F
O
Drain-Source Voltage VDSS 650 V E DIM MILLIMETERS
B
A _
10.16 + 0.2
G
Gate-Source Voltage VGSS 30 V B _
15.87 + 0.2
C _
2.54 + 0.2
ID 4.0 4.0* _
@TC=25 D 0.8 + 0.1
E _
3.18 + 0.1
Drain Current A
K
F _
3.3 + 0.1
Pulsed (Note1) IDP 16 16* G _
12.57 + 0.2
L M
R H _
0.5 + 0.1
Single Pulsed Avalanche Energy EAS J
260 mJ J 13.0 MAX
(Note 2) D
K _
3.23 + 0.1
L 1.47 MAX
Repetitive Avalanche Energy EAR M 1.47 MAX
10.6 mJ N N H
(Note 1) N _
2.54 + 0.2
O _
6.68 + 0.2
Peak Diode Recovery dv/dt Q _
4.7 + 0.2
dv/dt 4.5 V/ns
(Note 3) R _
2.76 + 0.2
Q
1 2 3
1. GATE
Drain Power Tc=25 106 36 W 2. DRAIN
PD 3. SOURCE
Dissipation Derate above25 0.85 0.29 W/
TO-220IS (1)
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 KHB4D0N65F2
Thermal Characteristics A C
F
S
Thermal Resistance, Junction-to-Case RthJC 1.18 3.47 /W
P
E DIM MILLIMETERS
Thermal Resistance, Junction-to- A _
10.0 + 0.3
B
RthJA 62.5 62.5 /W B _
G
15.0 + 0.3
Ambient C _
2.70 + 0.3
D 0.76+0.09/-0.05
* : Drain current limited by maximum junction temperature. E 3.2 +0.2
_
L L F _
3.0 + 0.3
K
R
G _ 0.3
12.0 +
PIN CONNECTION M H 0.5+0.1/-0.05
J
D D J _
13.6 + 0.5
D K _
3.7 + 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N N H N _
2.54 +0.1
P _
6.8 + 0.1
Q _
4.5 + 0.2
R _
2.6 + 0.2
0.5 Typ
Q
1 2 3 S
G 1. GATE
2. DRAIN
3. SOURCE
S TO-220IS
2007. 5. 10 Revision No : 0 1/1
KHB4D0N65P/F/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 650 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.95 - V/
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Drain Cut-off Current IDSS VDS=650V, VGS=0V, - - 10 A
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.0A - 2.4 3.0
Forward Transconductance gFS VDS=50V, ID=2.0A (Note4) - 3.8 - S
Dynamic
Total Gate Charge Qg - 20 25
VDS=520V, ID=4.0A
Gate-Source Charge Qgs - 4.0 - nC
VGS=10V (Note4, 5)
Gate-Drain Charge Qgd - 7.5 -
Turn-on Delay time td(on) - 29.5 69
Turn-on Rise time tr VDD=325V, RG=25 - 63.4 136.7
ns
Turn-off Delay time td(off) ID=4.0A (Note4, 5) - 63.2 136.4
Turn-off Fall time tf - 30 70
Input Capacitance Ciss - 645 838
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 60 78 pF
Reverse Transfer Capacitance Crss - 7.4 9.6
Source-Drain Diode Ratings
Continuous Source Current IS - - 4.0
VGS
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