Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC khb4d0n80p1_f1_f2
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SEMICONDUCTOR KHB4D0N80P1/F1/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB4D0N80P1
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS
G
_
avalanche characteristics. It is mainly suitable for electronic ballast and B
A 9.9 + 0.2
B 15.95 MAX
switch mode power supplies. Q C 1.3+0.1/-0.05
_
I D 0.8 + 0.1
E _
3.6 + 0.2
K P F _
2.8 + 0.1
M G 3.7
L
H 0.5+0.1/-0.05
FEATURES J I 1.5
D J _
13.08 + 0.3
VDSS=800V, ID=4A N N H K 1.46
L _
1.4 + 0.1
Drain-Source ON Resistance M _
1.27 + 0.1
N _
2.54 + 0.2
: RDS(ON)=3.6 @VGS = 10V O _
4.5 + 0.2
_
2.4 + 0.2
Qg(typ.)=25nC 1 2 3 1. GATE P
_
2. DRAIN Q 9.2 + 0.2
3. SOURCE
MAXIMUM RATING (Tc=25 ) TO-220AB
RATING
KHB4D0N80F1
CHARACTERISTIC SYMBOL KHB4D0N80F1 UNIT A C
KHB4D0N80P1
KHB4D0N80F2
F
O
Drain-Source Voltage VDSS 800 V E DIM MILLIMETERS
B
A _
10.16 + 0.2
G
B _
15.87 + 0.2
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