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SEMICONDUCTOR KHB4D5N60P/F/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB4D5N60P
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for switching mode B
A _
9.9 + 0.2
B 15.95 MAX
power supplies. Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
K P F _
2.8 + 0.1
FEATURES M G 3.7
L
H 0.5+0.1/-0.05
VDSS(Min.)= 600V, ID= 4.5A J I 1.5
D J _
13.08 + 0.3
Drain-Source ON Resistance : N N H K 1.46
_
RDS(ON)=2.5 @VGS =10V L 1.4 + 0.1
_
M 1.27 + 0.1
Qg(typ.) =17nC N _
2.54 + 0.2
O _
4.5 + 0.2
1 2 3 P _
2.4 + 0.2
1. GATE
2. DRAIN Q _
9.2 + 0.2
3. SOURCE
MAXIMUM RATING (Tc=25 )
RATING TO-220AB
CHARACTERISTIC SYMBOL KHB4D5N60F UNIT
KHB4D5N60P KHB4D5N60F
KHB4D5N60F2 C
A
Drain-Source Voltage VDSS 600 V
F
O
Gate-Source Voltage VGSS 30 V E DIM MILLIMETERS
B
A _
10.16 + 0.2
G
@TC=25 4.5 4.5* B _
15.87 + 0.2
ID C _
2.54 + 0.2
Drain Current @TC=100 2.8 2.8* A D _
0.8 + 0.1
E _
3.18 + 0.1
Pulsed (Note1) IDP 18 18*
K
F _
3.3 + 0.1
G _
12.57 + 0.2
L
Single Pulsed Avalanche Energy M
R H _
0.5 + 0.1
EAS 260 mJ J J 13.0 MAX
(Note 2) K _
3.23 + 0.1
D
Repetitive Avalanche Energy L 1.47 MAX
EAR 10.6 mJ M 1.47 MAX
(Note 1) N N H
N _
2.54 + 0.2
Peak Diode Recovery dv/dt O _
6.68 + 0.2
dv/dt 4.5 V/ns Q _
4.7 + 0.2
(Note 3) R _
2.76 + 0.2
Q
1 2 3
Drain Power Tc=25 106 36 W 1. GATE
PD 2. DRAIN
Dissipation Derate above25 0.85 0.29 W/ 3. SOURCE
Maximum Junction Temperature Tj 150 TO-220IS (1)
Storage Temperature Range Tstg -55 150
KHB4D5N60F2
Thermal Characteristics
A C
Thermal Resistance, Junction-to-Case RthJC 1.18 3.47 /W
F
S
Thermal Resistance, Case-to-Sink RthCS 0.5 - /W
P
E DIM MILLIMETERS
_
Thermal Resistance, Junction-to- A 10.0 + 0.3
B
RthJA 62.5 62.5 /W B _
G
15.0 + 0.3
Ambient C _
2.70 + 0.3
D 0.76+0.09/-0.05
* : Drain current limited by maximum junction temperature. E 3.2 +0.2
_
L L F _
3.0 + 0.3
K
R
G _
12.0 + 0.3
PIN CONNECTION M H 0.5+0.1/-0.05
J
D D J _
13.6 + 0.5
D K _
3.7 + 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N N H N _
2.54 +0.1
P _
6.8 + 0.1
Q _
4.5 + 0.2
R _
2.6 + 0.2
0.5 Typ
Q
1 2 3 S
G 1. GATE
2. DRAIN
3. SOURCE
S TO-220IS
2010. 10. 27 Revision No : 1 1/7
KHB4D5N60P/F/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.6 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.25A - 2.2 2.5
Dynamic
Total Gate Charge Qg - 17 21
VDS=480V, ID=4.5A
Gate-Source Charge Qgs - 3 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 7.3 -
Turn-on Delay time td(on) - 15 35
VDD=300V
Turn-on Rise time tr - 35 80
RL=67 ns
Turn-off Delay time td(off) - 70 150
RG=25 (Note4,5)
Turn-off Fall time tf - 80 170
Input Capacitance Ciss - 655 850
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 66 86 pF
Reverse Transfer Capacitance Crss - 8 11
Source-Drain Diode Ratings
Continuous Source Current IS - - 4.5
VGS
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