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SEMICONDUCTOR KHB7D0N80P1/F1
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
VDSS=800V, ID=7A
Drain-Source ON Resistance
: RDS(ON)=1.55 @VGS = 10V
Qg(typ.)=51.5nC
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC SYMBOL UNIT
KHB7D0N80P1 KHB7D0N80F1
Drain-Source Voltage VDSS 800 V KHB7D0N80F1
Gate-Source Voltage VGSS 30 V
@TC=25 ID 7.0 7.0*
Drain Current A
Pulsed (Note1) IDP 28 28*
Single Pulsed Avalanche Energy EAS 580 mJ
(Note 2)
Repetitive Avalanche Energy EAR 16.7 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 167 56 W
PD
Dissipation Derate above25 1.33 0.44 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.75 2.25 /W
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W
Ambient
* : Drain current limited by maximum junction temperature.
2007. 3. 26 Revision No : 1 1/7
KHB7D0N80P1/F1
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 800 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.93 - V/
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Drain Cut-off Current IDSS VDS=800V, VGS=0V, - - 10 A
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.5A - 1.25 1.55
Forward Transconductance gFS VDS=50V, ID=3.5A (Note4) - 5.5 - S
Dynamic
Total Gate Charge Qg - 51.5 64
VDS=640V, ID=7.0A
Gate-Source Charge Qgs - 85 - nC
VGS=10V (Note4, 5)
Gate-Drain Charge Qgd - 19.5 -
Turn-on Delay time td(on) - 39 88
Turn-on Rise time tr VDD=400V, RG=25 - 63.5 137
ns
Turn-off Delay time td(off) ID=7.0A (Note4, 5) - 195.5 401
Turn-off Fall time tf - 83 176
Input Capacitance Ciss - 1863 2422
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 141 184 pF
Reverse Transfer Capacitance Crss - 17 23
Source-Drain Diode Ratings
Continuous Source Current IS - - 7.0
VGS
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